Electrical and optical nonuniformity of Si-implanted and rapid thermal annealed InP:Fe

Rao, Mulpuri V.
June 1986
Applied Physics Letters;6/2/1986, Vol. 48 Issue 22, p1522
Academic Journal
The radial variation in electrical and optical characteristics of Si-implanted InP:Fe wafer activated by rapid thermal annealing has been studied. The sheet carrier concentration (Ns) followed similar radial variation as etch pit density (EPD) whereas the photoluminescence (PL) intensity of C-Zn acceptor peak varied inversely with EPD. A maximum electron mobility of 2500 cm2/V s and electrical activation of 35% have been obtained for 3×1012 cm-2, 200 keV Si+ implants annealed for 15 s in the range 700–850 °C. A high intensity peak centered at 1.350 eV was also observed in the PL spectra of the samples and tentatively assigned to a Si-defect complex.


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