TITLE

Organometallic vapor phase epitaxial growth of InP using new phosphorus sources

AUTHOR(S)
Larsen, C. A.; Chen, C. H.; Kitamura, M.; Stringfellow, G. B.; Brown, D. W.; Robertson, A. J.
PUB. DATE
June 1986
SOURCE
Applied Physics Letters;6/2/1986, Vol. 48 Issue 22, p1531
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Two organophosphorus compounds, isobutylphosphine and tertiarybutylphosphine, have been investigated for their possible use as precursors in the organometallic vapor phase epitaxy process. They are the first nonhydride compounds to be used as phosphorus sources. Pyrolysis studies show that the first decomposition products are phosphine and various organic compounds. The phosphine then pyrolyzes to give phosphorus. The materials are less pyrophoric and less toxic than phosphine, and so are safer to use. The compounds have been used to grow epitaxial layers of InP on InP and GaAs substrates. The layers exhibit photoluminescence and electrical properties which are similar to those of layers grown with phosphine.
ACCESSION #
9820008

 

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