Infrared absorption in PtSi-Si interface states

Flohr, Th.; Schulz, M.
June 1986
Applied Physics Letters;6/2/1986, Vol. 48 Issue 22, p1534
Academic Journal
Photoacoustic absorption and transmission measurements are performed to detect the contribution of interface states at the PtSi-Si interface to the absorption of the metal film. PtSi films on silicon substrates in the thickness range 27–420 Å are employed. The results are interpreted by a multilayer optical model. Absorption in an interface layer representing interface states is about 10%.


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