3C-SiC p-n junction diodes

Furukawa, K.; Uemoto, A.; Shigeta, M.; Suzuki, A.; Nakajima, S.
June 1986
Applied Physics Letters;6/2/1986, Vol. 48 Issue 22, p1536
Academic Journal
3C-SiC p-n junction diodes are prepared on Si substrates by chemical vapor deposition growth with appropriate impurity doping, and their current-voltage (I-V) and capacitance-voltage (C-V) characteristics are studied. I-V curves show good rectifying characteristics with a value of 3.3 for the ideal factor n and a reverse leakage current less than 10 μA at -5 V. The junction area is approximately 0.8 mm2. The built-in voltage is around 1.4 V by C-V measurements.


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