Oxygen isotope effect on the 889 cm-1 band in silicon

Stein, H. J.
June 1986
Applied Physics Letters;6/2/1986, Vol. 48 Issue 22, p1540
Academic Journal
Implantation studies with 16O and 18O isotopes have been used to evaluate a recent proposal that an 889 cm-1 absorption band in O-containing Si is produced by two oxygen atoms in a vacancy. The present isotope studies indicate that the 889 cm-1 mode is determined by a single oxygen atom bonded to Si. Thus, O-O interactions in the 889 cm-1 mode must be weak or nonexistent. Possible relationships of the 889 cm-1 band to oxygen-vacancy defects and thermal donors are considered.


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