High contrast, 1.3 μm optical AND gate with gain

Sharfin, W. F.; Dagenais, M.
June 1986
Applied Physics Letters;6/2/1986, Vol. 48 Issue 22, p1510
Academic Journal
A high contrast (5:1), 1.3 μm wavelength optical and gate is demonstrated using a bistable Fabry–Perot InGaAsP/InP laser amplifier with large gain. Using simple arguments, it is shown that, subject to realistic constraints, the maximum attainable contrast ratio in a bistable Fabry–Perot logic gate is about 10. Unlike bistable amplifiers, there is a significant trade-off between contrast and gain in passive devices.


Related Articles

  • High mobility back-gated InAs/GaSb double quantum well grown on GaSb substrate. Nguyen, Binh-Minh; Wei Yi; Noah, Ramsey; Thorp, Jacob; Sokolich, Marko // Applied Physics Letters;1/19/2015, Vol. 106 Issue 3, p1 

    We report a backgated InAs/GaSb double quantum well device grown on GaSb substrate. The use of the native substrate allows for high materials quality with electron mobility in excess of 500000cm2/Vs at sheet charge density of 8 x 1011 cm-2 and approaching 100000cm²/Vs near the charge...

  • Au/InAs Surface Plasmon Polariton Amplifier and SPASER. Fedyanin, Dmitry Yu.; Arsenin, Aleksey V. // AIP Conference Proceedings;10/5/2011, Vol. 1398 Issue 1, p70 

    We propose a novel scheme of surface plasmon polariton (SPP) amplification by stimulated emission of radiation. It is based on a minority carrier injection in an Au/InAs Schottky diode. The proposed amplifier is electrically pumped and has a planar structure. Therefore, it is very compact and...

  • Novel linear autozeroing floating-gate amplifier for ultra low-voltage applications. Berg, Yngvar; Azadmehr, Mehdi // World Academy of Science, Engineering & Technology;2012, Issue 68, p262 

    In this paper we present a linear autozeroing ultra low-voltage amplifier. The autozeroing performed by all ULV circuits is important to reduce the impact of noise and especially avoid power supply noise in mixed signal low-voltage CMOS circuits. The simulated data presented is relevant for a...

  • Outputs don't swing rail to rail. Baker, Bonnie // EDN;9/3/2007, Vol. 52 Issue 18, p30 

    The article discusses the output of single-supply amplifiers. According to the author, outputs of single-power supply amplifiers do not swing from one rail to another. The author stated that the amplifier is nonlinear when it is close to the rail. Three figures are provided in the article. The...

  • Programmable analog circuits yield single-chip sinusoidal oscillators. Salvatori, Stefano; Lorenzi, Paolo // EDN Europe;Mar2006, Vol. 51 Issue 3, p54 

    The article describes the use of field programmable analog circuits in signal conditioning and filtering applications. The circuits are based on complementary metal oxide semiconductor-operational transconductance and switched-capacitor amplifiers. The devices offer an easiest way to solve...

  • Turn A Compensated Current Sink Into A Common-Emitter (CE) Amplifier. REEVE, BILL // Electronic Design;10/8/2009, Vol. 57 Issue 21, p52 

    Several circuit diagrams are presented which explain how temperature and beta compensated current sink turn into common-emitter (CE) amplifiers.

  • A Modified Approach for CMOS Auto-Zeroed Offset-Stabilized Opamp. Taghizadeh, Abouzar; Koozehkanani, Ziaddin Daie; Sobhi, Jafar // Circuits & Systems;Apr2013, Vol. 4 Issue 2, p193 

    In this paper, a very low-offset continuous time amplifier has been presented. It has the fully differential structure and uses an Auto-zeroed offset stabilization technique. This structure consists of two phases in which the offset value is sampled in the first phase and then subtracted from...

  • An Enhanced Bulk-Driven Folded-Cascode Amplifier in 0.18 µm CMOS Technology.  // Circuits & Systems;Apr2012, Vol. 3 Issue 2, p187 

    The article discusses a new modification of Bulk-Driven Folded-Cascode (BDFC) amplifier using standard 0.18 micrometer complementary metal oxide semiconductor triple-well process with 1.2 supply voltage. It discusses the challenge of designing high-performance integrated circuits and the issues...

  • CMOS Yields Rugged, Fully Integrated 24-GHz Power Amplifier.  // Microwaves & RF;Oct2005, Vol. 44 Issue 10, p50 

    Focuses on complementary metal oxide semiconductor (CMOS) process technology. Description of the CMOS amplifier developed by Abbas Komijani, Arun Natarajan and Ali Hajimiri of the California Institute of Technology; Output power of the amplifier; Other features of the amplifier.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics