Effects of boron profiles on the open circuit voltage of p-i-n and n-i-p amorphous silicon solar cells

Jeffrey, F. R.; Vernstrom, G. D.
June 1986
Applied Physics Letters;6/2/1986, Vol. 48 Issue 22, p1538
Academic Journal
Data are presented showing that boron carryover into the i layer is responsible for the commonly observed difference in open circuit voltage between p-i-n and n-i-p amorphous silicon solar cells. It is proposed that the lower voltage samples are being limited by surface recombination at the p/i interface and that boron carryover reduces this recombination current. The Voc is then able to rise to the point where it is limited by the bulk recombination current.


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