Annealing of Si damage caused by reactive ion etching in SF6 gas mixtures

Pinto, R.; Babu, R. Sachidananda; Bhattacharya, P. K.
May 1986
Applied Physics Letters;5/26/1986, Vol. 48 Issue 21, p1427
Academic Journal
Damage introduced in silicon during reactive ion etching (RIE) in SF6 gas mixtures has been studied using x-ray photoelectron spectroscopy, Schottky barrier measurements, and Rutherford backscattering. RIE was done at 0.1 W cm-2 power density with the rf cathode covered with a quartz plate, and the annealing behavior of damage was studied at various temperatures up to 800 °C in N2 ambient. The results obtained indicate the following: (a) contamination by F, S, and metal ions is insignificant; (b) lighter atoms such as hydrogen cause higher electrical damage and lower lattice damage, both of which can be annealed at 400 °C; (c) heavier atoms such as argon cause lower electrical damage but higher lattice damage which requires a temperature ≥800 °C for recovery.


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