Analysis of switching transients in KNO3 ferroelectric memories

Araujo, C.; Scott, J. F.; Godfrey, R. Bruce; McMillan, L.
May 1986
Applied Physics Letters;5/26/1986, Vol. 48 Issue 21, p1439
Academic Journal
We have measured the switching current transient i(t) versus time for 75-nm-thick KNO3 nonvolatile memories having address voltages of 6.3 V and switching times 20–30 ns. The currents are minimum (nearly zero) at t=0 and exhibit a symmetric shape about their maxima at 23±2 ns. This is compatible with Fatuzzo’s theory of sideways domain growth [Phys. Rev. 127, 1999 (1962)] as well as with our earlier results on thickness dependence of coercive field Ec∼d-1.3 and field dependence of switching times ts∼E-1.5. All of the results show that domain growth speed transverse to the applied field is the rate-limiting parameter.


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