Superlattice GaAs mixed tunneling avalanche transit time device structure

Christou, A.; Varmazis, K.
May 1986
Applied Physics Letters;5/26/1986, Vol. 48 Issue 21, p1446
Academic Journal
A superlattice GaAs-Ga0.7Al0.3As mixed tunneling avalanche transit time device has been fabricated and tested at 94 GHz. Two superlattice regions are utilized in order to control the avalanche and the drift currents. The superlattice in the avalanche region enhances the electron ionization rate by a factor of 8, while the superlattice in the drift region maximizes the tunneling current. At 94 GHz, pulsed output power of 0.2–0.4 W was obtained.


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