GaInAs/GaAs strained-layer superlattices grown by low pressure metalorganic vapor phase epitaxy

Roth, A. P.; Sacilotti, M.; Masut, R. A.; D’Arcy, P. J.; Watt, B.; Sproule, G. I.; Mitchell, D. F.
May 1986
Applied Physics Letters;5/26/1986, Vol. 48 Issue 21, p1452
Academic Journal
Strained-layer superlattices (SLS’s) of GaxIn1-xAs/GaAs (x[bar_over_tilde:_approx._equal_to]0.8–0.9) have been grown by low pressure metalorganic vapor phase epitaxy. The reactants were trimethylgallium, trimethylindium, and arsine. The structures were characterized by Auger profiling and low-temperature photoluminescence. These measurements show that high quality SLS’s with interface widths no larger than 25 Å and very narrow luminescence peaks (6.5 meV) similar to the best structures grown by molecular beam epitaxy, can be easily grown by low pressure metalorganic vapor phase epitaxy.


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