Absence of Fermi level pinning at metal-InxGa1-xAs(100) interfaces

Brillson, L. J.; Slade, M. L.; Viturro, R. E.; Kelly, M. K.; Tache, N.; Margaritondo, G.; Woodall, J. M.; Kirchner, P. D.; Pettit, G. D.; Wright, S. L.
May 1986
Applied Physics Letters;5/26/1986, Vol. 48 Issue 21, p1458
Academic Journal
Soft x-ray photoemission spectroscopy measurements of clean, ordered InxGa1-xAs (100) surfaces with Au, In, Ge, or Al overlayers reveal an unpinned Fermi level across the entire In alloy series. The Fermi level stabilization energies depend strongly on the particular metal and differ dramatically from those of air-exposed interfaces. This wide range of Schottky barrier height for III-V compounds is best accounted for by a chemically induced modification in metal-alloy composition.


Related Articles

  • Special Features of Electron Scattering at Al[sub x]Ga[sub 1 – ][sub x]As/AlAs(001) Interfaces. Grinyaev, S. N.; Karavaev, G. F.; Chernyshov, V. N. // Semiconductors;Apr2003, Vol. 37 Issue 4, p417 

    The effect of total reflection of an electron wave from an interface was investigated for Al[sub x]Ga[sub 1 - x]As/AlAs structures. Analysis was performed on the basis of calculations by the pseudopotential method as well as analytically and numerically in terms of the three-valley model. The...

  • Amorphous phase formation in an as-deposited platinum-GaAs interface. Dae-Hong Ko; Sinclair, Robert // Applied Physics Letters;4/29/1991, Vol. 58 Issue 17, p1851 

    Investigates the presence of a thin amorphous intermixed layer at the platinum-GaAs interface in as-deposited Pt/GaAs and Si/Pt/GaAs samples. Use of high-resolution electron microscopy, microdiffraction and energy dispersive spectroscopy in the study.

  • Interfacial layer formation of the CdTe/InSb heterointerfaces grown by temperature gradient.... Kim, T.W.; Park, H.L. // Applied Physics Letters;11/14/1994, Vol. 65 Issue 20, p2597 

    Describes the formation of interfacial layer in cadmium telluride (CdTe)/indium antimonide heterointerfaces. Growth of CdTe thin film by temperature gradient vapor transport deposition; Observation of heterostructure stoichiometry by Auger electron spectroscopy; Formation of stacking faults;...

  • Enhanced blocking temperature in NiO spin valves: Role of cubic spinel ferrite layer between pinned layer and NiO. Farrow, R. F. C.; Farrow, R.F.C.; Carey, M. J.; Carey, M.J.; Marks, R. F.; Marks, R.F.; Rice, P. M.; Rice, P.M.; Smith, David J. // Applied Physics Letters;8/21/2000, Vol. 77 Issue 8 

    We compare the blocking temperature for simple permalloy (80% Ni)/Au/permalloy/NiO spin valves with and without an interfacial, oxidized Fe layer (Fe layer 12 Ã… thick) inserted at the permalloy/NiO interface. We find a significantly increased blocking temperature and pinning field for spin...

  • Formation of the TiSi[sub 2] C40 as an intermediate phase during the reaction of the Si/Ta/Ti system. La Via, F.; Mammoliti, F.; Corallo, G.; Grimaldi, M. G.; Migas, D. B.; Miglio, Leo // Applied Physics Letters;3/26/2001, Vol. 78 Issue 13, p1864 

    The effect of a thin Ta layer at the Si/Ti interface on the intermediate phase formation has been studied in detail by in situ sheet resistance, x-ray diffraction, transmission electron microscopy and Rutherford backscattering spectroscopy of partially reacted samples. When a Ta layer is...

  • Energy level alignment driven by electron affinity difference at 3,4,9,10-perylenetetracarboxylic dianhydride/n-GaAs(100) interfaces. Park, Sunggook; Kampen, Thorsten U.; Zahn, Dietrich R. T.; Braun, Walter // Applied Physics Letters;12/17/2001, Vol. 79 Issue 25, p4124 

    Ultraviolet photoemission spectroscopy (UPS) was employed to investigate the electronic structure upon deposition of 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) on differently treated n-GaAs(100) surfaces. Interface dipoles are found to form according to the electron affinities (EA) of...

  • Thermal conductivity and interfacial thermal resistance of polymeric low k films. Hu, Chuan; Kiene, Michael; Ho, Paul S. // Applied Physics Letters;12/17/2001, Vol. 79 Issue 25, p4121 

    The effective thermal conductivity of four polymeric thin films with distinct molecular morphologies has been measured as a function of film thickness down to 70 Å using a 3 ω technique. Comparing to SiO[sub 2], the intrinsic thermal conductivity of polymers is about 5-10 times smaller...

  • Compositional profile of the amorphous silicon/nitride interface studied with Rutherford backscattering. Abelson, J. R.; Tsai, C. C.; Sigmon, T. W. // Applied Physics Letters;10/6/1986, Vol. 49 Issue 14, p850 

    The compositional profile of the interface between plasma-deposited amorphous silicon (a-Si[ATOTHER]@B:[/ATOTHER] H) and silicon nitride (a-SiNx:H) thin films has been examined using high depth resolution Rutherford backscattering spectrometry. We have optimized the grazing exit angle geometry...

  • Intrinsic strain at lattice-matched Ga0.47In0.53As/InP interfaces as studied with high-resolution x-ray diffraction. Vandenberg, J. M.; Panish, M. B.; Temkin, H.; Hamm, R. A. // Applied Physics Letters;11/14/1988, Vol. 53 Issue 20, p1920 

    High-resolution x-ray studies of Ga0.47In0.53As/InP superlattices reveal, for the first time, the presence of an intrinsic interfacial strain at heteroepitaxial interfaces. This strain is produced by an asymmetric ordering of the atomic layers in the leading and trailing interfaces of each...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics