Optoelectronic integrated AlGaAs/GaAs p-i-n/field-effect transistor with an embedded, planar p-i-n photodiode

Miura, S.; Wada, O.; Makiuchi, M.; Nakai, K.
May 1986
Applied Physics Letters;5/26/1986, Vol. 48 Issue 21, p1461
Academic Journal
A new planarization technique for fabricating an optoelectronic integrated circuit (OEIC) has been developed. A photodiode has been perfectly embedded in a semi-insulating GaAs substrate with a high uniformity over the wafer. A monolithically integrated p-i-n photodiode/field-effect transistor (FET) has been successfully fabricated by applying this technique. This result indicates that the present technique is promising for the application to fabricating not only p-i-n/FET but also larger scale OEIC receivers and transmitters.


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