Negative differential resistances from Hg1-xCdxTe-CdTe single quantum barrier heterostructures

Chow, D. H.; McGill, T. C.
May 1986
Applied Physics Letters;5/26/1986, Vol. 48 Issue 21, p1485
Academic Journal
A novel negative differential resistance device is proposed and analyzed theoretically. The proposed device is a Hg1-xCdxTe-CdTe-Hg1-xCdxTe single quantum barrier heterostructure with 0.2≤x≤0.4. The anticipated negative differential resistance is a consequence of the unique properties of Hg1-xCdxTe-CdTe heterojunctions. Calculations are performed to predict the current-voltage characteristics of the proposed device. The results indicate that room-temperature negative differential resistances can be obtained over a large range of applied voltages. The high-speed capabilities associated with quantum barrier tunnel structures make the proposed device a candidate for high-frequency applications.


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