TITLE

Growth of GaN films using trimethylgallium and hydrazine

AUTHOR(S)
Gaskill, D. K.; Bottka, N.; Lin, M. C.
PUB. DATE
May 1986
SOURCE
Applied Physics Letters;5/26/1986, Vol. 48 Issue 21, p1449
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Hydrazine has been used as a nitrogen source for the organometallic vapor phase deposition of GaN using trimethylgallium and a nitrogen carrier gas in the temperature range 425–960 °C. Hydrazine and trimethylgallium form an adduct at room temperature which decomposes over the substrate with an activation energy of 1 eV for temperatures below 650 °C. No carbon has been detected by Auger spectroscopy in the films. The electrical properties are dominated by oxygen impurities, probably originating from the hydrazine. Since hydrazine readily decomposes above 400 °C, it is a better source of nitrogen for low-temperature depositions than other, more stable nitrogen sources.
ACCESSION #
9819904

 

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