Coherent instabilities in p-i-n avalanche GaAs diodes up to submillimeter frequency range

Lippens, D.; Nieruchalski, J. L.
May 1986
Applied Physics Letters;5/26/1986, Vol. 48 Issue 21, p1464
Academic Journal
Many-particle numerical simulations of impact ionization in submicron GaAs p-i-n diodes reveal coherent fluctuations up to the millimeter-wave range. The analysis of the auto and cross correlations of fluctuating quantities demonstrates that these spontaneous oscillations result from the delay in excess carrier generation by impact ionization owing to carrier energy relaxation effects rather than the appearance of a negative differential carrier mobility. With regard to this phenomenon, it is believed that the energy relaxation mode of operation of avalanche oscillators may be considered.


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