Phase-locked shallow mesa graded barrier quantum well laser arrays

Mawst, L. J.; Givens, M. E.; Emanuel, M. A.; Zmudzinski, C. A.; Coleman, J. J.
May 1986
Applied Physics Letters;5/19/1986, Vol. 48 Issue 20, p1337
Academic Journal
Graded barrier quantum well heterostructures have been grown by metalorganic chemical vapor deposition and processed into real index-guided shallow mesa laser arrays. Single-stripe devices have threshold currents as low as 14 mA (533 μm length) and ten-element arrays have threshold currents as low as 9 mA per stripe with 52% differential quantum efficiency. These arrays operate phase locked with sharp double-lobed far-field patterns up to 1.75 times threshold current.


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