TITLE

Parallel operation and crosstalk measurements in GaAs étalon optical logic devices

AUTHOR(S)
Jewell, J. L.; Lee, Y. H.; Duffy, J. F.; Gossard, A. C.; Wiegmann, W.
PUB. DATE
May 1986
SOURCE
Applied Physics Letters;5/19/1986, Vol. 48 Issue 20, p1342
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report the first parallel operation of GaAs optical logic elements and bistable devices. Arrays up to 2×4 in size were operated using a picosecond pump and probe technique, while in the bistable mode we achieved uniform response in two spots. Crosstalk due to carrier diffusion became noticeable at separations of typically ∼20–30 μm in the bistable devices. Pulsed operation at 82 MHz allowed separations down to ∼10 μm limited only by diffraction. Efficient heat sinking in the pulsed array resulted in negligible heating even when continually operated for many minutes. All experiments were performed at room temperature.
ACCESSION #
9819886

 

Related Articles

  • Observation of discrete resistance levels in large area graded gap diodes at low temperatures. Judd, T.; Couch, N. R.; Beton, P. H.; Kelly, M. J.; Kerr, T. M.; Pepper, M. // Applied Physics Letters;12/15/1986, Vol. 49 Issue 24, p1652 

    We have investigated the low-temperature properties of a GaAs n-i-n diode where the intrinsic region consists of a linearly graded gap of AlGaAs, and is surrounded by lightly doped GaAs regions. The current-voltage (I-V) characteristics are strongly asymmetric and are dominated by the graded...

  • Measurement of hole velocity in n-type InGaAs. Hill, P.; Schlafer, J.; Powazinik, W.; Urban, M.; Eichen, E.; Olshansky, R. // Applied Physics Letters;5/4/1987, Vol. 50 Issue 18, p1260 

    Hole drift velocities in n-type In0.53Ga0.47As have been determined experimentally for the first time. Measured values of the frequency response of transit-time-limited InGaAs p-i-n photodiodes were fit with the theoretical response using hole velocity as the only free parameter. Measurements...

  • Continuous room-temperature operation of a 759-nm GaAlAs distributed feedback laser. Takigawa, S.; Kume, M.; Hamada, K.; Tateoka, K.; Naitoh, H.; Yoshikawa, N.; Yamamoto, A.; Shimizu, H.; Itoh, K. // Applied Physics Letters;11/16/1987, Vol. 51 Issue 20, p1580 

    The first continuous wave (cw) operation at room temperature of a GaAlAs short-wavelength distributed feedback (DFB) laser is reported. The cw operation at a wavelength of 759 nm was realized by use of the buried twin-ridge substrate (BTRS) structure which has an excellent current confinement...

  • Current-voltage and capacitance-voltage behavior of high-resistivity (AlxGa1-x)yIn1-yP on GaAs. Casey, H. C.; McCalmont, J. S.; Pandharpurkar, H.; Wang, T. Y.; Stringfellow, G. B. // Applied Physics Letters;2/13/1989, Vol. 54 Issue 7, p650 

    Unintentionally doped layers of (AlxGa1-x)y In1-y P with energy gaps of approximately 2.0 eV were grown lattice matched to GaAs by organometallic vapor phase epitaxy. These layers were high resistivity. Current-voltage (I-V) and capacitance-voltage (C-V) measurements were made on Cr/Au...

  • Metal-sulfur-based air-stable passivation of GaAs with very low surface-state densities. Ashby, Carol I. H.; Zavadil, Kevin R.; Baca, Albert G.; Chang, P.-C.; Hammons, B. E.; Hafich, M. J. // Applied Physics Letters;1/17/2000, Vol. 76 Issue 3 

    An air-stable electronic surface passivation for GaAs and other III-V compound semiconductors that employs sulfur and a suitable metal ion, e.g., Zn, and that is robust towards plasma dielectric deposition has been developed. Initial improvements in photoluminescence are twice that of S-only...

  • Modeling a backgated GaAs metal–semiconductor–metal photodetector. Hurd, C. M.; McKinnon, W. R. // Journal of Applied Physics;11/1/1996, Vol. 80 Issue 9, p5449 

    Deals with a study which illustrated the physics behind a gallium arsenide metal-semiconductor-metal photodetector with an ohmic backgate provided by a p-doped layer using a two-dimensional, drift-diffusion calculation. Simulation details; Effect of the p-doped layer; Conclusions.

  • Enhanced diffusion of Si due to He ion implantation in Si-delta doped GaAs layers. Tell, B.; Brown Goebeler, K. F.; Cunningham, J. E.; Chiu, T. H.; Jan, W. Y. // Applied Physics Letters;6/25/1990, Vol. 56 Issue 26, p2657 

    Enhanced diffusion of Si due to He ion implantation in Si-delta doped GaAs layers has been observed by the capacitance-voltage technique. After an 800 °C anneal, an increase as large as an order of magnitude in the diffusion coefficient compared to thermal diffusion was observed. We also...

  • Effects of prewells on transport in p-type resonant tunneling diodes. Lewis, R. M.; Lewis, R.M.; Wei, H. P.; Wei, H.P.; Lin, S. Y.; Lin, S.Y.; Klem, J. F.; Klem, J.F. // Applied Physics Letters;10/23/2000, Vol. 77 Issue 17 

    We investigate the transport of holes through AlAs/In[sub 0.10]Ga[sub 0.90]As resonant tunneling diodes which utilize In[sub x]Ga[sub 1-x]As prewells in the emitter with x=0, 0.10, and 0.20. The data show an increase in peak current and bias at resonance and a concurrent increase in the...

  • Unusual low-temperature behavior of Fermi level movement at the Sb/GaAs interface. Cao, Renyu; Miyano, K.; Lindau, I.; Spicer, W. E. // Applied Physics Letters;7/11/1988, Vol. 53 Issue 2, p137 

    The temperature dependence of the development of the Sb/GaAs electronic properties has been found to be quite small, compared to that seen with a large number of metal/GaAs interfaces studied previously. This has been correlated with the relatively small change in interface morphology due to...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics