Double-injection field-effect transistor: A new type of solid-state device

Hack, M.; Shur, M.; Czubatyj, W.
May 1986
Applied Physics Letters;5/19/1986, Vol. 48 Issue 20, p1386
Academic Journal
We propose a new general principle of operation for solid-state devices, and demonstrate a novel transistor which we call a double-injection field-effect transistor, based on this principle. We have fabricated amorphous silicon alloy double-injection transistors operating on the modulation of a double-injection current by a gate field covering the complete path of the current channel. Using these amorphous silicon alloy double-injection transistors, we have achieved currents over 20 times those theoretically possible for conventional amorphous silicon field-effect transistors operating under similar conditions. This new principle, applicable to both thin-film amorphous and crystalline devices, offers the potential of high-current, high-speed field-effect transistors with modulated optical emission.


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