TITLE

Abrupt reduction of the partial sputtering yield of copper in silicon due to beam induced oxidation and segregation

AUTHOR(S)
Wittmaack, K.
PUB. DATE
May 1986
SOURCE
Applied Physics Letters;5/19/1986, Vol. 48 Issue 20, p1400
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Boron-doped silicon samples with a submonolayer coverage of copper were sputter profiled under O+2 bombardment at energies between 4 and 12 keV and impact angles of 2° and 32°. The profiles of Cu+ secondary ions showed a peak due to the buildup of oxygen in the sample. Under conditions of incomplete oxidation (at 32°) the Cu+ intensity beyond the peak decreased exponentially with a decay length of about 39 nm (8 keV O+2). By contrast, beam induced SiO2 formation (at 2°) resulted in a rather abrupt decrease of the Cu+ intensity (factor of 10 within a sputtered depth of 1.3–3 nm depending on the beam energy). The effect is attributed to very rapid diffusion of copper away from the surface oxide (beam induced segregation).
ACCESSION #
9819846

 

Related Articles

  • Correlation between the O... induced electron emission coefficient and the removal rate of Cu... Wittmaack, K.; Homma, Y. // Applied Physics Letters;5/13/1991, Vol. 58 Issue 19, p2138 

    Studies sputter removal of thin overlayers of copper (Cu) on silicon (Si), using 10 keV O[sub 2+] primary ions at near-normal incidence. Decay length characterized by the exponential fall-off of the Cu signal; Correlation between decay length and carrier type, dopant concentration, polarity and...

  • Surface-related low-frequency noise of sputtered copper film. Wong, H.; Cheng, Y. C.; Ruan, G. // Journal of Applied Physics;1/1/1990, Vol. 67 Issue 1, p312 

    Presents the first attempt in correlating the low-frequency noise with the surface characteristics of metal films prepared by sputtering of copper onto oxidized-silicon and sapphire substrates. Noise behaviors and the surface physics of metal films on the substrates; Dependence of the spectral...

  • Thermostable Ag die-attach structure for high-temperature power devices. Zhang, Hao; Nagao, Shijo; Suganuma, Katsuaki; Albrecht, Hans-Juergen; Wilke, Klaus // Journal of Materials Science: Materials in Electronics;Feb2016, Vol. 27 Issue 2, p1337 

    This paper explores the possibility of using Ag paste containing silicon carbide particles (SiC-p) as a novel high-temperature die-attachment solution for the design of power devices. The bonding structure used in this research was composed of silicon dies and a direct bonded copper (DBC)...

  • Control of hole carrier density of polycrystalline Cu[sub 2]O thin films by Si doping. Ishizuka, S.; Kato, S.; Okamoto, Y.; Akimoto, K. // Applied Physics Letters;2/11/2002, Vol. 80 Issue 6, p950 

    The effects on the electrical properties of Si doping into Cu[sub 2]O thin films deposited by reactive sputtering were studied. The hole density increased from 1×10[sup 15] to 1×10[sup 17] cm[sup -3] with increasing Si content and the minimum resistivity obtained was 12 Ω cm. It was...

  • Enhanced Cu-Teflon adhesion by presputtering prior to the Cu deposition. Chang, Chin-An; Baglin, J. E. E.; Schrott, A. G.; Lin, K. C. // Applied Physics Letters;7/13/1987, Vol. 51 Issue 2, p103 

    Adhesion of Cu to Teflon has been studied by depositing Cu to Teflon with and without a presputtering prior to the Cu deposition. Without presputtering, a weak adhesion is observed, with a value of 1 g/mm, which fails the scotch tape test. With a presputtering using 500 eV Ar+ ions, the adhesion...

  • Spatial distribution of Cu sputter ejected by very low energy ion bombardment. Doughty, C.; Gorbatkin, S.M.; Berry, L. A. // Journal of Applied Physics;8/15/1997, Vol. 82 Issue 4, p1868 

    Investigates the spatial distributions of copper atoms sputtered by He+, Ar+, and Xe+ ions incident. Ionized physical vapor deposition; Estimated forward directed resputtering; Total yield as a function of angle of incidence.

  • Enhancement of low-temperature critical epitaxial thickness of Si(100) with ion beam sputtering. Smith, Donald L.; Chau-Chen Chen; Anderson, Greg B.; Hagstrom, Stig B. // Applied Physics Letters;2/8/1993, Vol. 62 Issue 6, p570 

    Describes the epitaxial growth of argon cation beam sputtered silicon. Observation on the film thickness; Exhibition of an Arrhenius dependence on temperature; Analysis of the surface diffusion; Relation between surface roughness and film thickness.

  • Sputtering of Si with decaborane cluster ions. Sosnowski, Marek; Albano, Maria A.; Li, Cheng; Gossmann, Hans-Joachim L.; Jacobson, Dale C. // Applied Physics Letters;1/28/2002, Vol. 80 Issue 4, p592 

    Decaborane cluster ions (B[sub 10]H[sub x][SUP ARRANGE="STAGGER"]+]) may play an important role in the manufacturing of future semiconductor devices, as they facilitate a very shallow implantation of B with a relatively high beam energy, due to its partition among the constituent atoms. While...

  • Erratum: On the relative importance of physical and chemical sputtering during ion-enhanced etching of silicon by XeF2 [Appl. Phys. Lett. 50, 1838 (1987)]. Houle, F. A. // Applied Physics Letters;2/8/1988, Vol. 52 Issue 6, p515 

    Presents a corrected version of the article, titled 'On the relative importance of physical and chemical sputtering during ion-enhanced etching of silicon by XeF[2],' by F.A. Houle, published in the volume 50 issue of the 'Applied Physics Letters' journal.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics