TITLE

High quality CdTe epilayers on GaAs grown by hot-wall epitaxy

AUTHOR(S)
Schikora, D.; Sitter, H.; Humenberger, J.; Lischka, K.
PUB. DATE
May 1986
SOURCE
Applied Physics Letters;5/12/1986, Vol. 48 Issue 19, p1276
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Hot-wall epitaxy is used for the first time for the growth of high quality CdTe epilayers on semi-insulating GaAs. The quality of the films is investigated by photoluminescence at 10 K, 78 K, and room temperature. The photoluminescence spectra at 78 K show a strong bound exciton recombination at about 1.58 eV with a linewidth of 11 meV. The linewidth of the bound exciton emission at 10 K is 1 meV. The electrical properties of the as-grown layers are measured by Hall effect yielding a hole concentration of p=3×1012 cm-3 and a mobility of 100 cm2/V s at 270 K.
ACCESSION #
9819806

 

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