Dependence of silicon-on-insulator transistor parameters on oxygen implantation temperature

Davis, J. R.; Taylor, M. R.; Spiller, G. D. T.; Skevington, P. J.; Hemment, P. L. F.
May 1986
Applied Physics Letters;5/12/1986, Vol. 48 Issue 19, p1279
Academic Journal
Silicon-on-insulator films have been formed by high-dose oxygen implantation. Thermal donors, resulting from the residual oxygen content of the single crystal silicon region of the films, have been found to influence the electrical performance of transistors fabricated in them. The amount of oxygen in the active region of the silicon layer is strongly dependent on the oxygen implantation temperature. As the temperature is decreased below 500 °C an increasing thickness of oxygen-rich polycrystalline silicon is formed between the single crystal region and the buried oxide, causing the oxygen concentration in the single crystal region (and hence the thermal donor activity) to fall. As well as providing thermal donors, the residual oxygen also causes a lattice strain which increases the electron mobility.


Related Articles

  • Observation of current staircase due to large quantum level spacing in a silicon single-electron transistor with low parasitic series resistance. Saitoh, Masumi; Hiramoto, Toshiro // Journal of Applied Physics;5/15/2002 Part 1, 2 & 3, Vol. 91 Issue 10, p6725 

    We have fabricated a silicon point-contact channel single-electron transistor (SET) with an ultrasmall dot. By narrowing only the point-contact region and suppressing the parasitic series resistance, a peak conductance as large as 8.8 µS and single-electron addition energy as large as 128 meV...

  • Single-electron transistor effect in a two-terminal structure. Vyshenski, S. V. // JETP Letters;10/10/97, Vol. 66 Issue 7, p540 

    A peculiarity of the single-electron transistor effect makes it possible to observe this effect even in structures lacking a gate electrode altogether. The proposed method can be useful for experimental study of charging effects in structures with an extremely small central island confined...

  • Transistor uses quantum mechanics for speed. Parks, Elizabeth; Singer, Sherri // Machine Design;05/07/98, Vol. 70 Issue 8, p23 

    Reports on Sandia National Laboratory engineers' development of the double electron layer tunneling transistor (Deltt), which could run up to a trillion operations per second. Deltts' use of less power and microamperes than traditional transistors; Layers of gallium-arsenide.

  • Cover Picture: One decade of fully transparent oxide thin-film transistors: fabrication, performance and stability (Phys. Status Solidi RRL 9/2013). Frenzel, Heiko; Lajn, Alexander; Grundmann, Marius // Physica Status Solidi - Rapid Research Letters;Sep2013, Vol. 7 Issue 9, pn/a 

    In this issue, Frenzel, Lajn and Grundmann review the technological progress of fully transparent oxide thin film transistors (see pp. 605–615). They find a clear trend towards the usage of amorphous oxide semiconductors that can be fabricated by means of cheap and scalable fabrication...

  • Subband mixing effect in double-barrier diodes with a restricted lateral dimension. Tarucha, Seigo; Hirayama, Yoshiro; Tokura, Yasuhiro // Applied Physics Letters;4/15/1991, Vol. 58 Issue 15, p1623 

    Studies the tunneling characteristics of double-barrier diodes with a restricted lateral dimension. Laterally confined subband structures for case one and two diodes; Characterization of single- and double-barrier diodes; Analysis of the measured tunneling current spectrum.

  • Single transistor static memory cell: Circuit application of a new quantum transistor. Chen, J.; Yang, C.H.; Wilson, R.A.; Wood, C.E.C. // Applied Physics Letters;1/4/1993, Vol. 62 Issue 1, p96 

    Evaluates the fabrication and application of a new quantum transistor. Basis of the operating principle on quantum selection rules in resonant tunneling; Display of current voltage characteristics; Demonstration of a static memory cell using single transistor.

  • Charge sensitivity of a single electron transistor. Hanke, Ulrik; Galperin, Yu. M. // Applied Physics Letters;10/3/1994, Vol. 65 Issue 14, p1847 

    Investigates the charge sensitivity of a capacitive-coupled single electron transistor with analytical and numerical calculations. Increase in transconductance-to-noise ratio; Importance of Coulomb energy to the correlated single electron tunneling; Demonstration of a single-electron charging...

  • Narrow electron injector for ballistic electron spectroscopy. Kast, M.; Pacher, C.; Strasser, G.; Gornik, E. // Applied Physics Letters;6/4/2001, Vol. 78 Issue 23, p3639 

    A three-terminal hot electron transistor is used to measure the normal energy distribution of ballistic electrons generated by an electron injector utilizing an improved injector design. A triple barrier resonant tunneling diode with a rectangular transmission function acts as a narrow (1 meV)...

  • Role of quasiparticle scattering in Gray’s superconducting transistor. Frank, D. J.; Davidson, A.; Klapwijk, T. M. // Applied Physics Letters;3/15/1985, Vol. 46 Issue 6, p603 

    We report the results of detailed numerical simulations of Gray’s transistor mechanism [Appl. Phys. Lett. 32, 392 (1978)]. These calculations, carried out using two different approaches, show that the energy scattering of quasiparticles is very important in achieving gain such as Gray...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics