Dependence of silicon-on-insulator transistor parameters on oxygen implantation temperature

Davis, J. R.; Taylor, M. R.; Spiller, G. D. T.; Skevington, P. J.; Hemment, P. L. F.
May 1986
Applied Physics Letters;5/12/1986, Vol. 48 Issue 19, p1279
Academic Journal
Silicon-on-insulator films have been formed by high-dose oxygen implantation. Thermal donors, resulting from the residual oxygen content of the single crystal silicon region of the films, have been found to influence the electrical performance of transistors fabricated in them. The amount of oxygen in the active region of the silicon layer is strongly dependent on the oxygen implantation temperature. As the temperature is decreased below 500 °C an increasing thickness of oxygen-rich polycrystalline silicon is formed between the single crystal region and the buried oxide, causing the oxygen concentration in the single crystal region (and hence the thermal donor activity) to fall. As well as providing thermal donors, the residual oxygen also causes a lattice strain which increases the electron mobility.


Related Articles

  • Observation of current staircase due to large quantum level spacing in a silicon single-electron transistor with low parasitic series resistance. Saitoh, Masumi; Hiramoto, Toshiro // Journal of Applied Physics;5/15/2002 Part 1, 2 & 3, Vol. 91 Issue 10, p6725 

    We have fabricated a silicon point-contact channel single-electron transistor (SET) with an ultrasmall dot. By narrowing only the point-contact region and suppressing the parasitic series resistance, a peak conductance as large as 8.8 µS and single-electron addition energy as large as 128 meV...

  • Surface recombination current and emitter compositional grading in Npn and Pnp GaAs/AlxGa1-xAs heterojunction bipolar transistors. de Lyon, T. J.; Casey, H. C.; Enquist, P. M.; Hutchby, J. A.; SpringThorpe, A. J. // Applied Physics Letters;2/13/1989, Vol. 54 Issue 7, p641 

    An experimental study of current gain in Npn and Pnp GaAs/AlxGa1-xAs heterojunction bipolar transistors (HBTs) with either compositionally graded or abrupt base-emitter heterojunctions is reported. In both Npn and Pnp device structures, linear compositional grading increases the amount of base...

  • Photocurrent generation in single electron tunneling transistors. Tageman, Ola // Low Temperature Physics;Mar1999, Vol. 25 Issue 3, p214 

    Analyzes a single-electron tunneling transistor with a non-equilibrium mode population in one of the leads. Modeling of transport through a dot coupled to a channel, both formed by gates from the two-dimensional electron gas of a gallium arsenide/aluminum gallium arsenide heterostructure;...

  • Charge sensitivity of a single electron transistor. Hanke, Ulrik; Galperin, Yu. M. // Applied Physics Letters;10/3/1994, Vol. 65 Issue 14, p1847 

    Investigates the charge sensitivity of a capacitive-coupled single electron transistor with analytical and numerical calculations. Increase in transconductance-to-noise ratio; Importance of Coulomb energy to the correlated single electron tunneling; Demonstration of a single-electron charging...

  • Si single electron tunneling transistor with nanoscale floating dot stacked on a Coulomb island.... Nakajima, Anri; Futatsugi, Toshiro // Applied Physics Letters;7/21/1997, Vol. 71 Issue 3, p353 

    Fabricates a silicon single electron tunneling transistor with nanoscale floating dot stacked on a Coulomb island by a self-aligned process. Exhibition of drain current oscillations by the device; Observation of single electron tunneling from the channel to the floating dot gate; Development of...

  • Mechanical tuning of tunnel gaps for the assembly of single-electron transistors. Carlsson, Sven-Bertil; Junno, Tobias; Montelius, Lars; Samuelson, Lars // Applied Physics Letters;9/6/1999, Vol. 75 Issue 10, p1461 

    Studies the mechanical tuning of tunnel gaps for the assembly of single-electron transistors. Fabrication of gold single-electron transistors; Formation of statically stable tunnel gaps between the discs and lithographically defined electrodes.

  • Determination of the concentration of hot-carrier-induced bulk defects in laser-recrystallized polysilicon thin film transistors. Brown, T. M.; Brown, T.M.; Migliorato, P.; Brunner, K.; Abstreiter, G. // Applied Physics Letters;2/21/2000, Vol. 76 Issue 8 

    We present a method to investigate hot carrier induced defects in laser recrystallized polysilicon thin film transistors, based on the use of a structure with front and back gate and the analysis of the off current. The maximum process temperature for these devices was 425 °C. We find that...

  • Single transistor static memory cell: Circuit application of a new quantum transistor. Chen, J.; Yang, C.H.; Wilson, R.A.; Wood, C.E.C. // Applied Physics Letters;1/4/1993, Vol. 62 Issue 1, p96 

    Evaluates the fabrication and application of a new quantum transistor. Basis of the operating principle on quantum selection rules in resonant tunneling; Display of current voltage characteristics; Demonstration of a static memory cell using single transistor.

  • A p-n-p AlGaAs heterojunction bipolar transistor for high-temperature operation. Frost, M. S.; Riches, M.; Kerr, T. // Journal of Applied Physics;9/15/1986, Vol. 60 Issue 6, p2149 

    Presents a study that investigated the fabrication of an AlGaAs heterojunction transistor which has successfully operated over a temperature range of over 100 Kelvin to 800 Kelvin. Details on device fabrication; Common emitter current gain at room temperature; Information on the variation of...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics