Photoresponse of the EL2 absorption in undoped semi-insulating GaAs

Dischler, B.; Fuchs, F.; Kaufmann, U.
May 1986
Applied Physics Letters;5/12/1986, Vol. 48 Issue 19, p1282
Academic Journal
The response of the EL2 absorption band to monochromatic secondary illumination has been studied in undoped semi-insulating GaAs. Photoinduced changes of the absorption band are spectrally nonuniform. In addition, the changes are nonmonotonic in time similar to the EL2 photocapacitance transients: A fast enhancement in absorption is followed by a slow quenching. These data can be explained in terms of the EL2 properties known from photocapacitance studies. A comparison with recent electron paramagnetic resonance (EPR) results for the AsGa antisite provides direct evidence that the EL2 absorption band and the As+Ga EPR are induced by the same defect.


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