Ion beam etching and surface characterization of indium phosphide

Bouadma, N.; Devoldere, P.; Jusserand, B.; Ossart, P.
May 1986
Applied Physics Letters;5/12/1986, Vol. 48 Issue 19, p1285
Academic Journal
A new method of Ar ion beam etching of InP using a LN2 cooled sample holder is described. Smooth and low-damage etched surfaces have been obtained using this technique. Auger electron spectroscopy measurements and laser Raman spectroscopy analysis indicated that the morphology degradation was significantly reduced.


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