Effect of hydrogen on undoped and lightly Si-doped molecular beam epitaxial GaAs layers

Pao, Yi-Ching; Liu, D.; Lee, W. S.; Harris, J. S.
May 1986
Applied Physics Letters;5/12/1986, Vol. 48 Issue 19, p1291
Academic Journal
This letter describes a series of experiments in which pure hydrogen gas (at up to 1.2×10-6 Torr partial pressure) was introduced during molecular beam epitaxial (MBE) growth of low-doped and undoped GaAs at a substrate temperature of 580 °C. A major improvement in the electrical properties of the epitaxial layer has been observed. Electron mobilities at 77 K and deep level transient spectroscopy (DLTS) spectra are presented. A sharp increase in electron mobility and a dramatic reduction of M1 and M4 deep electron traps as shown by DLTS have been achieved with small amounts of H2 gas at 1.2×10-6 Torr partial pressure.


Related Articles

  • 1/8 Problems in the La-, Bi- and Y-Based Cuprates and new Anomalies in the Overdoped Region of the La-Based Cuprate. Koike, Y.; Akoshima, M.; Adachi, T.; Kakinuma, N.; Noji, T.; Ono, Y.; Nishizaki, T.; Kobayashi, N.; Watanabe, I.; Nagamine, K. // International Journal of Modern Physics B: Condensed Matter Phys;12/20/99, Vol. 13 Issue 29/31, p3546 

    Recent experimental work on the 1/8 problem by our group is reviewed not only in the La-based cuprate but also in the Bi- and Y-based ones. In the partially Zn-substituted Bi[sub 2]Sr[sub 2]Ca[sub 1-χ]Y[sub χ](Cu[sub 1- y]Zn[sub y])[sub 2]O[sub 8+δ], we have found anomalous...

  • [sup 63,65]Cu NQR Study of Ba-site Occupation in Y[sub 1-x]Pr[sub x]Ba[sub 2]Cu[sub 3]O[sub 7-δ]. Abdelrazek, M. M.; Reyes, A. P.; Kuhns, P. L.; Moulton, W. G. // International Journal of Modern Physics B: Condensed Matter Phys;12/20/99, Vol. 13 Issue 29/31, p3615 

    We report measurements of [sup 63,65]Cu nuclear quadrupole resonance (NQR) at ambient temperatures to indirectly probe Ba-site occupation of Pr atoms in doped Y[sub 1-χ]Pr[sub χ]Ba[sub 2]Cu[sub 3]O[sub 7-δ] (0 ≤ χ ≤ 1.0). Preliminary results show anomalous peaks in the...

  • CuK-Edge Studies of the Charge Carries in Th-Doped Cuprate System R[sub 2-x]Th[sub x]CuO[sub 4-δ] (R=Nd, Sm and Gd). Liang, G.; Yi, Y.; Jardim, R. F.; Wang, L. V. // International Journal of Modern Physics B: Condensed Matter Phys;12/20/99, Vol. 13 Issue 29/31, p3750 

    To further study the charge carrier concentration in electron doped cuprate superconductors, a systematic x-ray absorption near edge structure (XANES) measurement has been carried out on Th-doped superconductor system R[sub 2 - χ]Th[sub χ]CuO[sub 4 - & δ] (R = Nd, Sin, and Gd). The...

  • Small-angle neutron scattering study of semiconductor microcrystallites in optical glasses. Degiorgio, Vittorio; Banfi, GianPiero; Righini, Giancarlo; Rennie, Adrian // Applied Physics Letters;12/31/1990, Vol. 57 Issue 27, p2879 

    The structure of semiconductor-doped glasses is studied by small-angle neutron scattering. We derive the average size of the microcrystals, and we give information on the spatial distribution of the microcrystals. A new aspect emerging from our data is the existence of a depletion region that...

  • Femtosecond carrier relaxation in semiconductor-doped glasses. Nuss, M. C.; Zinth, W.; Kaiser, W. // Applied Physics Letters;12/22/1986, Vol. 49 Issue 25, p1717 

    Light induced changes of absorption in semiconductor-doped glasses are studied on the femtosecond and picosecond time scale. Extremely rapid absorption recovery times of 200 fs are found when carriers are excited with large excess energy (500 meV) above the absorption edge of the...

  • Two-dimensional effects in two-terminal n+-p-n+ devices fabricated by planar technology. Jain, S. C.; Staszak, Z. J.; Musallam, A.; Mattson, R. H. // Journal of Applied Physics;1/1/1988, Vol. 63 Issue 1, p231 

    Studies the I-V characteristics of two-terminal n[sup+]-p-n[sup+] devices fabricated by planar technology. Barrier lowering (BL) effects as a function of applied voltage for one-dimensional and two-dimensional (2D) models; Difference of substrate dopings and channel lengths in the magnitude of...

  • Reply to ‘‘Comments on the steady state photocarrier grating technique to measure diffusion lengths’’. Weiser, K. // Journal of Applied Physics;6/1/1992, Vol. 71 Issue 11, p5728 

    Presents a reply to comments on the study which developed steady state photocarrier grafting technique for measuring diffusion strengths. Details of the analysis of the study; Basis of the value of the ambipolar diffusion length.

  • Application of elastic mid-infrared light scattering to the investigation of internal gettering in Czochralski-grown silicon. Kalinushkin, V. P.; Buzynin, A. N.; Murin, D. I.; Yuryev, V. A.; Astaf’ev, O. V. // Semiconductors;Oct97, Vol. 31 Issue 10, p994 

    The influence of the internal gettering process on the large-scale defects in Czochralski-grown boron-doped single-crystal silicon is investigated by low-angle mid-infrared light scattering. The large-scale defects in the as-grown material and crystals subjected to the internal gettering...

  • Changes in Superconducting Gap Anisotropy with Doping and Implications for the Penetration Depth. Mesot, J.; Norman, M. R.; Fretwell, H. M.; Kaminski, A.; Campuzano, J. C.; Ding, H.; Randeria, M.; Paramekanti, A.; Takeuchi, T.; Mochiku, T.; Yokoya, T.; Sato, T.; Takahashi, T.; Kadowaki, K. // International Journal of Modern Physics B: Condensed Matter Phys;12/20/99, Vol. 13 Issue 29/31, p3709 

    The momentum dependence of the superconducting gap at low temperatures is precisely determined from angle resolved photoemission (ARPES) measurements on overdoped and underdoped samples of Bi2212. As the doping decreases, the maximum gap increases, but the slope of the gap near the nodes...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics