Effect of hydrogen on undoped and lightly Si-doped molecular beam epitaxial GaAs layers

Pao, Yi-Ching; Liu, D.; Lee, W. S.; Harris, J. S.
May 1986
Applied Physics Letters;5/12/1986, Vol. 48 Issue 19, p1291
Academic Journal
This letter describes a series of experiments in which pure hydrogen gas (at up to 1.2×10-6 Torr partial pressure) was introduced during molecular beam epitaxial (MBE) growth of low-doped and undoped GaAs at a substrate temperature of 580 °C. A major improvement in the electrical properties of the epitaxial layer has been observed. Electron mobilities at 77 K and deep level transient spectroscopy (DLTS) spectra are presented. A sharp increase in electron mobility and a dramatic reduction of M1 and M4 deep electron traps as shown by DLTS have been achieved with small amounts of H2 gas at 1.2×10-6 Torr partial pressure.


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