TITLE

New capping technique for zone-melting recrystallization of silicon-on-insulator films

AUTHOR(S)
Chen, C. K.; Geis, M. W.; Finn, M. C.; Tsaur, B-Y.
PUB. DATE
May 1986
SOURCE
Applied Physics Letters;5/12/1986, Vol. 48 Issue 19, p1300
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A new capping technique employing high-temperature NH3 annealing has been developed to ensure uniform wetting by the molten Si zone during zone-melting recrystallization of Si-on-insulator films. By using this technique, we have reproducibly prepared 0.5-μm-thick films with <100> crystalline texture that are greatly improved in smoothness, void density, and thickness uniformity. In addition, recrystallized 1-μm-thick films have been obtained with large areas that are free of subboundaries, containing only threading dislocations at densities of less than 2×106 cm-2.
ACCESSION #
9819787

 

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