New capping technique for zone-melting recrystallization of silicon-on-insulator films

Chen, C. K.; Geis, M. W.; Finn, M. C.; Tsaur, B-Y.
May 1986
Applied Physics Letters;5/12/1986, Vol. 48 Issue 19, p1300
Academic Journal
A new capping technique employing high-temperature NH3 annealing has been developed to ensure uniform wetting by the molten Si zone during zone-melting recrystallization of Si-on-insulator films. By using this technique, we have reproducibly prepared 0.5-μm-thick films with <100> crystalline texture that are greatly improved in smoothness, void density, and thickness uniformity. In addition, recrystallized 1-μm-thick films have been obtained with large areas that are free of subboundaries, containing only threading dislocations at densities of less than 2×106 cm-2.


Related Articles

  • Evidence of local and global scaling regimes in thin films deposited by sputtering: An atomic force microscopy and electrochemical study. Souza Cruz, Tersio G.; Kleinke, M. U.; Gorenstein, A. // Applied Physics Letters;12/23/2002, Vol. 81 Issue 26, p4922 

    The surface morphology of NiO[sub x] thin films deposited by rf sputtering was studied by atomic force microscopy and by cyclic voltammetry. Linear relationships were observed in log-log plots of the interface width versus window length and in log-log plots of the peak current versus scan rate....

  • Fabrication of stable wide-band-gap ZnO/MgO multilayer thin films. Bhattacharya, P.; Das, Rasmi R.; Katiyar, R.S. // Applied Physics Letters;9/8/2003, Vol. 83 Issue 10, p2010 

    We report the fabrication of stable wide-band-gap (∼6 eV) ZnO/MgO multilayer thin films using pulsed-laser deposition on c-plane Al[sub 2]O[sub 3] substrates. The thickness of ZnO layers was varied in the range of 0.75–2.5 nm inside the MgO host with a constant MgO thickness of 1 nm....

  • Young modulus dependence of nanoscopic friction coefficient in hard coatings. Riedo, Elisa; Brune, Harald // Applied Physics Letters;9/8/2003, Vol. 83 Issue 10, p1986 

    We present an atomic force microscope study of nanoscopic sliding friction on diamond, diamond-like carbon, and on three CrN thin films with varying hardness obtained by different growth temperatures. For the CrN films, we show that the changes in the friction coefficient can be traced back to...

  • Low-temperature elastic properties of the permanent magnet compound Nd2Fe14B. Dadon, D.; Dariel, M. P.; Gefen, Y.; Klimker, H.; Rosen, M. // Applied Physics Letters;5/26/1986, Vol. 48 Issue 21, p1444 

    The velocity of longitudinal and transverse sound waves was measured between 77 and 300 K and used to determine the Young modulus, the shear modulus, and the adiabatic compressibility of the polycrystalline, strong permanent magnet compound, Nb2Fe14B. The spin reorientation occurring near 150 K...

  • Rutherford backscattering study of the photodissolution of Ag in amorphous GeSe2. Rennie, J.; Elliott, S. R.; Jeynes, C. // Applied Physics Letters;5/26/1986, Vol. 48 Issue 21, p1430 

    Amorphous GeSe2 films with Ag overlayers have been illuminated in situ in a Rutherford backscattering chamber and the evolution of the silver depth profile as a function of illumination time has been studied. The silver distribution in the doped region is found to be steplike as had earlier been...

  • Thickness-dependent void fraction of rf-sputtered amorphous Ge films by spectroscopic ellipsometry. McMarr, P. J.; Blanco, J. R.; Vedam, K.; Messier, R.; Pilione, L. // Applied Physics Letters;8/11/1986, Vol. 49 Issue 6, p328 

    In this letter it is shown that vapor deposited thin films prepared under conditions of low adatom mobility, such as amorphous Ge films in the present study, exhibit a nonlinear decrease in void fraction, and hence an increase in density with increasing film thickness. Fractal modeling of the...

  • Electrical and optical properties of sputtered TiNx films as a function of substrate deposition temperature. Thorpe, T. P.; Qadri, S. B.; Wolf, S. A.; Claassen, J. H. // Applied Physics Letters;11/10/1986, Vol. 49 Issue 19, p1239 

    Characterization results are given for a set of TiNx films grown on sapphire substrates at temperatures between 140 and 850 °C. A relationship between resistivity and spectral reflectivity is established, with highest reflectivities and lowest resistivities observed for the highest substrate...

  • Multiple wavelength optical recording using cyanine dye J aggregates in Langmuir–Blodgett films. Ishimoto, C.; Tomimuro, H.; Seto, J. // Applied Physics Letters;12/22/1986, Vol. 49 Issue 25, p1677 

    An optical storage technique based on the characteristic absorption bands of J aggregates of organic dyes is reported. The information is written by disordering the regular structures of cyanine dye J aggregates with a laser beam. This technique gives high recording sensitivity, and the...

  • Superconducting thin films based on La2-xSrxCuO4. de Lima, O. F.; Mattson, J.; Sowers, C. H.; Brodsky, M. B. // Applied Physics Letters;8/3/1987, Vol. 51 Issue 5, p369 

    Superconducting films (300–400 nm thick) of La2-xSrxCuO4 have been prepared by a combined evaporation-reaction method. Amorphous films of the oxide are formed initially on sapphire substrates at deposition temperatures of 25–400 °C. Crystallized films can then be obtained with...

  • Sputter deposition of YBa2Cu3O7-y thin films. Silver, R. M.; Talvacchio, J.; de Lozanne, A. L. // Applied Physics Letters;12/21/1987, Vol. 51 Issue 25, p2149 

    Thin films of YBa2Cu3O7-y were prepared by magnetron sputtering. The films were characterized by x-ray diffraction, in situ x-ray photoelectron spectroscopy to determine the as-deposited oxygen content for various substrate temperatures, and scanning electron microscopy to analyze the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics