Growth of strained-layer semiconductor-metal-semiconductor heterostructures

Tung, R. T.; Gibson, J. M.; Levi, A. F. J.
May 1986
Applied Physics Letters;5/12/1986, Vol. 48 Issue 19, p1264
Academic Journal
Single crystal epitaxial strained-layer semiconductor-metal-semiconductor heterostructures have been grown for the first time. Silicon layers were grown by molecular beam epitaxy over thin (<100 Å) NiSi2 layers on Si(111). The presence of ∼20 Å Si template layers formed at low temperature (<500 °C) on the silicide was shown to have a dramatic effect on subsequent Si growth. The overgrown Si layers were rotated 180° with respect to the NiSi2 and had a channeling minimum yield of ∼3%. Epitaxial strained-layer semiconductor-metal-semiconductor heterostructures represent a new class of material system with potential for high-speed device applications.


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