Growth of strained-layer semiconductor-metal-semiconductor heterostructures

Tung, R. T.; Gibson, J. M.; Levi, A. F. J.
May 1986
Applied Physics Letters;5/12/1986, Vol. 48 Issue 19, p1264
Academic Journal
Single crystal epitaxial strained-layer semiconductor-metal-semiconductor heterostructures have been grown for the first time. Silicon layers were grown by molecular beam epitaxy over thin (<100 Å) NiSi2 layers on Si(111). The presence of ∼20 Å Si template layers formed at low temperature (<500 °C) on the silicide was shown to have a dramatic effect on subsequent Si growth. The overgrown Si layers were rotated 180° with respect to the NiSi2 and had a channeling minimum yield of ∼3%. Epitaxial strained-layer semiconductor-metal-semiconductor heterostructures represent a new class of material system with potential for high-speed device applications.


Related Articles

  • Spectrally dependent photocurrent measurements in n+-n-n+ heterostructure devices. Snow, E. S.; Kirchoefer, S. W.; Glembocki, O. J. // Applied Physics Letters;5/15/1989, Vol. 54 Issue 20, p2023 

    Photocurrent measurements are shown to be a useful tool for characterizing charge-injecting heterostructure devices under bias. The measurements rely on a large photoconductive gain mechanism which operates in single-barrier, double-barrier, and superlattice devices. Photocurrent measurements on...

  • Strain and surface morphology in lattice-matched ZnSe/InxGa1-xAs heterostructures. Heun, S.; Paggel, J.J.; Sorba, L.; Rubini, S.; Bonanni, A.; Lantier, R.; Lazzarino, M.; Bonanni, B.; Franciosi, A.; Bonard, J.-M.; Ganière, J.-D.; Zhuang, Y.; Bauer, G. // Journal of Applied Physics;3/1/1998, Vol. 83 Issue 5, p2504 

    Presents information on the fabrication of the lattice-matched ZnSe/InxGa1-xAs heterostructures. Circumstances surrounding the compensation of the partial character of the strain relaxation within the ternary layer; What the complex surface morphology reflects; Information on the results.

  • Influence of charge flow along a semiconductor surface on the nature of the multiplication coefficient in a silicon–wide-gap layer structure. Sadygov, Z. Ya.; Jejer, T. V. // Technical Physics Letters;Apr97, Vol. 23 Issue 4, p324 

    It has been shown that the flow of mobile minority carriers along the semiconductor-wide-gap layer interface substantially influences the uniformity of the multiplication coefficient in an avalanche photodetector. Around inhomogeneities in the semiconductor substrate, a "dead zone" of fairly...

  • Fabrication of indium arsenic-antimony-bismuthide multilayer heterostructures by “capillary” liquid-phase epitaxy. Akchurin, R. Kh.; Zhegalin, V. A.; Sakharova, T. V.; Seregin, S. V. // Technical Physics Letters;Apr97, Vol. 23 Issue 4, p274 

    Low-temperature "capillary" liquid-phase epitaxy is used to grow InAs[sub 1-x-y]Sb[sub x]Bi[sub y]/InSb[sub 1-y]Bi[sub y] multilayer epitaxial heterostructures on InSb(111)A substrates. The heterostructures contained up to sixty epitaxial layers of thickness between 0.05 and 0.15 µm, which...

  • Transport properties in resonant tunneling heterostructures. Presilla, Carlo; Sjostrand, Johannes // Journal of Mathematical Physics;Oct96, Vol. 37 Issue 10, p4816 

    Examines transport properties in resonant tunneling heterostructures. Use of an adiabatic approximation in terms of instantaneous resonances to study steady-state and time-dependent transport properties of interacting electrons in the heterostructures; Development of a transport model...

  • Optical Properties of Superlattices in the Long-Wavelength Approximation. Kurilkina, S. N.; Kovchur, S. N. // Optics & Spectroscopy;Nov2000, Vol. 89 Issue 5, p751 

    Specific symmetry features of dielectric and gyrotropic properties of superlattices comprised of arbitrary crystalline layers are considered. It is shown that by changing the orientation of crystallographic axes of the high-symmetry components of the superlattice with respect to their...

  • The Double Heterostructure: Concept and its Applications in Physics, Electronics and Technology. Alferov, Zhores I. // International Journal of Modern Physics B: Condensed Matter Phys;2/20/2002, Vol. 16 Issue 5, p647 

    It is impossible to imagine now modern solid state physics without semiconductor heterostructures. Semiconductor heterostructures and, particularly, double heterostructures, including Quantum Wells, Wires and Dots are today the subject of research of 2/3 of the semiconductor physics community.

  • Resonant tunneling of electrons from quantized levels in the accumulation layer of double-barrier heterostructures. Wu, J. S.; Chang, C. Y.; Lee, C. P.; Chang, K. H.; Liu, D. G.; Liou, D. C. // Applied Physics Letters;11/26/1990, Vol. 57 Issue 22, p2311 

    We report the first observation of the resonant tunneling features associated with the quantized levels in the accumulation layer of the double-barrier resonant tunneling structure (DBRTS) with undoped electrodes. This quantum effect causes additional kinks in the current-voltage (I-V)...

  • Additional transmission resonances in interband tunnel structures. Aversa, Claudio; Sipe, J.E. // Applied Physics Letters;10/4/1993, Vol. 63 Issue 14, p1975 

    Focuses on the study of resonant tunneling phenomena in semiconductor heterostructures. Mechanisms for heavy-hole related resonances; Purpose of developing the boundary condition theory for heterostructures; Analysis of coherent transport in heterostructures.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics