First observation of the two-dimensional properties of the electron gas in Ga0.49In0.51P/GaAs heterojunctions grown by low pressure metalorganic chemical vapor deposition

Razeghi, M.; Maurel, P.; Omnés, F.; Armor, S. Ben; Dmowski, L.; Portal, J. C.
May 1986
Applied Physics Letters;5/12/1986, Vol. 48 Issue 19, p1267
Academic Journal
We report the first observation of a two-dimensional electron gas from Shubnikov–de Haas and quantum hall effect experiments in GaInP/GaAs heterostructures grown by low pressure metalorganic chemical vapor deposition. Angular-dependent Shubnikov–de Haas measurements confirm two dimensionality of the system. Low-temperature persistent photoconductivity was observed. Critical density at which the second electric subband starts to be populated was determined to be 7.3×1011 cm-2.


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