Capture and emission kinetics of individual Si:SiO2 interface states

Kirton, M. J.; Uren, M. J.
May 1986
Applied Physics Letters;5/12/1986, Vol. 48 Issue 19, p1270
Academic Journal
By studying the random telegraph signals in the drain current of small area metal-oxide-semiconductor field-effect transistors as a function of temperature, we show that carrier capture into individual interface states takes place via a multiphonon process. We demonstrate that the interface trap energy levels are temperature dependent as a result of entropy changes on trap ionization.


Related Articles

  • Chemical and electronic structure of InSb-CdTe interfaces. Mackey, K. J.; Allen, P. M. G.; Herrenden-Harker, W. G.; Williams, R. H.; Whitehouse, C. R.; Williams, G. M. // Applied Physics Letters;8/11/1986, Vol. 49 Issue 6, p354 

    The microscopic interactions at heterojunctions formed between cleaned surfaces of InSb and CdTe have been investigated by low-energy electron diffraction and soft x-ray photoelectron spectroscopy. Layers of CdTe have been deposited on 1×1 (110) cleaved InSb and on c(2×8) (100) sputter...

  • Interface traps and Pb centers in oxidized (100) silicon wafers. Gerardi, Gary J.; Poindexter, Edward H.; Caplan, Philip J.; Johnson, Noble M. // Applied Physics Letters;8/11/1986, Vol. 49 Issue 6, p348 

    The band-gap energy distribution of Pb centers on oxidized (100) Si wafers has been determined and compared with interface electrical trap density Dit. Two different Pb centers are observed on (100) Si: Pb0, which has the structure ·Si≡Si3, and is essentially identical to the sole Pb...

  • Si3N4-Si interface formation by catalytic nitridation using nitrogen exposures on alkali metal overlayers and removal of the catalyst: N2/Na/Si (100) 2×1. Soukiassian, P.; Gentle, T. M.; Schuette, K. P.; Bakshi, M. H.; Hurych, Z. // Applied Physics Letters;8/3/1987, Vol. 51 Issue 5, p346 

    Core level photoemission spectroscopy using synchrotron radiation was performed to study the activity of sodium on the nitridation of the (100) face of silicon. At room temperature, the exposition to molecular nitrogen of a Si (100) surface modified by a sodium monolayer induced the formation of...

  • Indium phosphide shallow homojunction solar cells made by metalorganic chemical vapor deposition. Spitzer, M. B.; Keavney, C. J.; Vernon, S. M.; Haven, V. E. // Applied Physics Letters;8/3/1987, Vol. 51 Issue 5, p364 

    The fabrication of highly efficient indium phosphide solar cells is described. The cells are formed by metalorganic chemical vapor deposition. A shallow homojunction design is discussed and total area air mass zero efficiency of 17.9% is reported; air mass 1.5 efficiency is 20.4%. Electrical...

  • Role of Hg in junction formation in ion-implanted HgCdTe. Bubulac, L. O.; Tennant, W. E. // Applied Physics Letters;8/3/1987, Vol. 51 Issue 5, p355 

    The present work clarifies the role of Hg diffusion in forming ion-implanted junctions in HgCdTe. Two experiments indicate that displaced Hg acts as a limited diffusion source. The first experiment contrasts n/p junction electrical profiles in two HgCdTe wafers, one p doped primarily by cation...

  • Erasable nanometer-scale modification at the Au/Si interface by ballistic electron emission... Hasegawa, Y.; Akiyama, K. // Applied Physics Letters;12/6/1999, Vol. 75 Issue 23, p3668 

    Studies the erasable nanometer-scale modification at the Au/Si interface by ballistic electron emission microscopy. Application of a negative voltage on the tip; Minimum size of writing and erasing corresponding to Au grains.

  • Frictional Shear Cracks. Brener, E. A.; Marchenko, V. I. // JETP Letters;8/25/2002, Vol. 76 Issue 4, p211 

    We discuss crack propagation along the interface between two dissimilar materials. The crack edge separates two states of the interface, “stick” and “slip.” In the slip region, we assume that the shear stress is proportional to the sliding velocity; i.e., the linear...

  • Oxidation kinetics of tunnel barrier and its effect on exchange bias of proximity interface. Bae, Seung-Young; Shin, Kyung-Ho; Lee, Je-Hyung; Rhie, Keung-Won; Lee, Kyoung-Il; Ha, Jae-Geun; Wang, Shan Xiang // Applied Physics Letters;12/17/2001, Vol. 79 Issue 25, p4130 

    Atomic migration in metallic multilayers of magnetic tunnel junction (MTJ), and consequent compositional modulation at the interface during plasma oxidation of an Al tunnel barrier is reported. Surprising effects of such modulation in our specific MTJ appear as the systematic increase in...

  • A neutron reflectometry study of the interface between poly(9,9-dioctylfluorene) and poly(methyl methacrylate). Higgins, A. M.; Jukes, P. C.; Martin, S. J.; Geoghegan, M.; Jones, R. A. L.; Cubitt, R. // Applied Physics Letters;12/23/2002, Vol. 81 Issue 26, p4949 

    Neutron reflectivity was used to study the interface between the semiconducting polymer poly(9,9-dioctylfluorene) (PFO) and the insulating polymer poly(methyl methacrylate) (PMMA). The PFO/PMMA interfacial width was measured in the nematic and crystalline phases of the PFO, both with the PMMA on...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics