(100) and (111) oriented CdTe grown on (100) oriented GaAs by molecular beam epitaxy

Ballingall, J. M.; Wroge, M. L.; Leopold, D. J.
May 1986
Applied Physics Letters;5/12/1986, Vol. 48 Issue 19, p1273
Academic Journal
Techniques are described for growing (100) and (111) oriented CdTe on (100) oriented GaAs by molecular beam epitaxy. Structural characterization reveals that there are substantial differences in crystalline quality between the two orientations, (111) being superior. Single-crystalline (100) oriented films can be grown on oxidized GaAs surfaces, but the crystalline quality is improved if the oxide is desorbed prior to growth.


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