p-n junction formation using laser induced donors in silicon

Mada, Y.; Inoue, N.
May 1986
Applied Physics Letters;5/5/1986, Vol. 48 Issue 18, p1205
Academic Journal
The generation of high concentration defect-related donor states during laser annealing of silicon with surface melting is found. Using these donors, p-n junctions are fabricated on p-type silicon substrate and good diode characteristics are obtained. Oxygen concentration increase in the laser annealed region is observed and suggests that the laser induced donors may be oxygen related. However, these donors are not oxygen thermal donors generally produced at moderate temperatures (<500 °C), because they are not annihilated by annealing at 650 °C. The present method provides for simple, low-temperature p-n junction formation without the addition of dopants. This method will be applicable to device fabrication on processed wafers without disturbing pre-existing device characteristics.


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