TITLE

Vapor phase epitaxial growth and characterization of InP on GaAs

AUTHOR(S)
Teng, S. J. J.; Ballingall, J. M.; Rosenbaum, F. J.
PUB. DATE
May 1986
SOURCE
Applied Physics Letters;5/5/1986, Vol. 48 Issue 18, p1217
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Crystal growth of InP on GaAs by vapor phase epitaxy is reported. It is demonstrated that good quality InP epitaxial layers with featureless surface morphology can be grown on GaAs substrate. Carrier concentration profile and Hall mobility measurements from as-grown n-type InP layers show that its doping behavior and mobility are similar to those grown on InP substrates. The results are encouraging for the development of devices utilizing InP/GaAs heterojunctions and the use of bulk GaAs as an alternative substrate to bulk InP for the epitaxial growth of InP and related compounds.
ACCESSION #
9819726

 

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