TITLE

Transistor action in novel GaAs/W/GaAs structures

AUTHOR(S)
Derkits, G. E.; Harbison, J. P.; Levkoff, J.; Hwang, D. M.
PUB. DATE
May 1986
SOURCE
Applied Physics Letters;5/5/1986, Vol. 48 Issue 18, p1220
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Structures containing thin polycrystalline layers of W embedded in essentially single crystal GaAs have been grown by molecular beam epitaxy. The W layers exhibit resistivities of 90–300 μΩ cm and Schottky barriers to both substrate and overgrown GaAs. The structures can act as metal gate transistors with β of 0.2–1.4 and α of 0.4–0.6. These are the first reported metal gate transistors in the III-V materials and the first using a nonepitaxial base and laterally seeded overgrowth. The use of a nonepitaxial base represents a degree of freedom which may be usefully exploited in a wide class of materials systems and may be important for the development of future metal gate transistors, especially in III-V materials.
ACCESSION #
9819725

 

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