Charge-density fluctuations and spatial modulation of heavy- and light-hole-like character in GaAs-AlGaAs(001) superlattices

Gell, M. A.; Jaros, M.
May 1986
Applied Physics Letters;5/5/1986, Vol. 48 Issue 18, p1214
Academic Journal
We have used local pseudopotentials with spin-orbit coupling to illustrate some of the effects occurring in GaAs-AlGaAs (001) superlattices as a result of fluctuations in the widths of the layers. Full account is taken of the microscopic superlattice potential, and states associated with the principal as well as secondary band minima are presented. It is shown that fluctuations of only one monolayer can lead to a complete transfer of probability density into the lowest Γ-related symmetry-induced state. This also applies to states associated with the secondary band minima confined in the hot-electron range of energies. We also show that small fluctuations in layer width can be used to achieve a tunable spatial modulation of heavy- and light-hole-like character within the same superlattice state. We discuss some of the implications of our results for band structure engineering.


Related Articles

  • Linewidth of phonon modes in infrared transmission spectra of GaAs/AlAs superlattices. Giehler, M.; Jahne, E.; Ploog, K. // Journal of Applied Physics;4/1/1995, Vol. 77 Issue 7, p3566 

    Provides information on a study which examined the infrared transmission spectra of gallium arsenic (GaAs)/ aluminum (Al) As superlattices. Dielectric functions in GaAs and AlAs; Measurement of the transmission spectra.

  • Optical properties in fractional-layer-superlattice quantum wires calculated by multi-band effective mass theory. Ando, Hiroaki; Chavez-Pirson, Arturo; Saito, Hisao; Kanbe, Hiroshi // Journal of Applied Physics;4/1/1995, Vol. 77 Issue 7, p3372 

    Presents information on a study which analyzed the absorption and gain properties in aluminum gallium arsenic fractional-layer-superlattice quantum wires. Methodology; Results and discussion; Conclusion.

  • Incorporation of Al and Ga in AlGaAs grown by low-pressure triethyl gallium metalorganic vapor-phase epitaxy. Chang, C. Y.; Chen, L. P.; Nee, C. Y. // Journal of Applied Physics;7/1/1985, Vol. 58 Issue 1, p609 

    Studies the growth of ALGaAs epitaxial films by incorporating triethyl-gallium, trimethyl-aluminum and AsH[sub3] as the gallium, aluminum and arsenic sources. Growth rate and incorporation rates of aluminum and gallium under reduced pressure; Experimental procedure; Information on the...

  • Negative charge, barrier heights, and the conduction-band discontinuity in AlxGa1-xAs capacitors. Hickmott, T. W.; Solomon, P. M.; Fischer, R.; Morkoç, H. // Journal of Applied Physics;4/15/1985, Vol. 57 Issue 8, p2844 

    Presents a study which measured the negative charge, barrier heights, and the conduction-band discontinuity in aluminum gallium[sub 1-x] arsenic capacitors. Methods; Results; Discussion.

  • Minority-carrier lifetime in n-Al0.38Ga0.62As. Ahrenkiel, R. K.; Dunlavy, D. J.; Loo, R. Y.; Kamath, G. S. // Journal of Applied Physics;5/15/1988, Vol. 63 Issue 10, p5174 

    Provides information on a study which investigated the minority-carrier lifetime of aluminum[sub0.38] gallium[sub0.62] arsenic[sub0.62] through laser-induced photoluminescence. Features and capacity of the device structures used to reduce recombination effect; Observation on the doping levels...

  • Threshold characteristics of epitaxial Al(Ga,As) surface-emitting lasers with integrated quarter-wave high reflectors. Gourley, P. L.; Drummond, T. J.; Zipperian, T. E.; Reno, J. L.; Plut, T. A. // Journal of Applied Physics;12/1/1988, Vol. 64 Issue 11, p6578 

    Presents a study which investigated threshold characteristics of epitaxial aluminum (gallium,arsenic) surface-emitting lasers with integrated quarter-wave high reflectors. Method of the study; Results and discussion; Conclusion.

  • Centers at junction boundaries in AlGaAs single heterojunction red light-emitting diodes. Calleja, E.; Muñoz, E; Gomez, A.; Jimenez, B. // Journal of Applied Physics;3/15/1986, Vol. 59 Issue 6, p2235 

    Presents a study which examined the presence and characteristics of deep centers located near the injecting-active junction boundaries in aluminum gallium arsenide red light-emitting diodes fabricated by liquid-phase epitaxy. Experiment; Results; Conclusions.

  • Electrical isolation of Al[sub x]Ga[sub 1-x]As by ion irradiation. v. Lippen, T.; Boudinov, H.; Tan, H. H.; Jagadish, C. // Applied Physics Letters;1/14/2002, Vol. 80 Issue 2, p264 

    The evolution of sheet resistance R[sub s] of n-type and p-type conductive Al[sub x]Ga[sub 1-x]As layers (x=0.3, 0.6, and 1.0) during proton irradiation was investigated. The threshold dose D[sub th] to convert a conductive layer to a highly resistive one is slightly different for n- and p-type...

  • Variable angle spectroscopic ellipsometry: Application to GaAs-AlGaAs multilayer homogeneity characterization. Alterovitz, Samuel A.; Snyder, Paul G.; Merkel, Kenneth G.; Woollam, John A.; Radulescu, David C.; Eastman, Lester F. // Journal of Applied Physics;5/15/1988, Vol. 63 Issue 10, p5081 

    Provides information on a study concerning the application of variable angle spectroscopic ellipsometry to a gallium arsenic-aluminum gallium arsenic multilayer structure to obtain three-dimensional characterization using repetitive measurements. Methods of data analysis; Reproducibility of the...

  • Interband transitions in molecular-beam-epitaxial AlxGa1-xAs/GaAs. Aubel, J. L.; Reddy, U. K.; Sundaram, S.; Beard, W. T.; Comas, James // Journal of Applied Physics;7/1/1985, Vol. 58 Issue 1, p495 

    Examines the interband transition energies in aluminum[subx]gallium[sub1]_[subx]arsenic layers grown by molecular-beam epitaxy techniques. Experimental details; Results of the study; Discussion of findings.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics