TITLE

Effect of HCl on silicon point defect formation during thermal oxidation of (100) float zone silicon wafers

AUTHOR(S)
Oh, Seajin; Tiller, W. A.; Hahn, SooKap
PUB. DATE
April 1986
SOURCE
Applied Physics Letters;4/28/1986, Vol. 48 Issue 17, p1125
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The effect of HCl in an oxidizing ambient on Si interstitial formation during oxidation has been studied. Using an antimony buried marker in (100) Si wafers, self-interstitial generation is directly observed via its influence on Sb diffusion. Adding HCl up to 6 vol % reduces the self-interstitial flux generated at the oxidation front, but it does not completely eliminate it.
ACCESSION #
9819700

 

Related Articles

  • Characterization of ultrathin oxide prepared by low-temperature wafer loading and nitrogen preannealing before oxidation. Wu, S. L.; Lee, C. L.; Lei, T. F.; Liang, M. S. // Journal of Applied Physics;8/15/1992, Vol. 72 Issue 4, p1378 

    Presents a study that observed the high-performance ultrahin oxide prepared by a low-temperature wafer loading and nitrogen preannealing before oxidation. Experimental procedures; Structural morphology and oxide thickness of conventionally thermal oxidation and special oxidation samples;...

  • Oxygen consumption rate model in HCl oxidation over a supported CuO-CeO2 composite oxide catalyst under lean oxygen condition. Dai, Yong; Fei, Zhaoyang; Xu, Xihua; Chen, Xian; Tang, Jihai; Cui, Mifen; Qiao, Xu // Canadian Journal of Chemical Engineering;Jun2016, Vol. 94 Issue 6, p1140 

    Lean-oxygen oxidation of HCl, in which O2 conversion can reach as high as ∼60 to ∼90 %, can greatly simplify the process of recycling Cl2 using gas-phase catalysis technology. The O2 consumption rate in lean-oxygen HCl oxidation over a supported CuO-CeO2 composite oxide catalyst was...

  • Analyses of HF/NH[sub 4] F buffer-treated Si(1 1 1) surfaces using XPS, REM and SIMS. Ma, Y.; Eades, J. A. // Applied Physics A: Materials Science & Processing;1996, Vol. 62 Issue 3, p247 

    The effect of different cleaning procedures on Si(1 1 1) wafers has been studied. A three-step cleaning process was used. The first two steps (thermal oxidation followed by RCA cleaning) were common to all samples. The final step involved rinsing in one of a set of HF/NH[sub 4] F buffer...

  • Internal oxidation of low dose separation by implanted oxygen wafers in different.... Ericsson, Per; Bengtsson, Stefan // Applied Physics Letters;10/20/1997, Vol. 71 Issue 16, p2310 

    Investigates the electrical properties and structure of buried oxide in low dose separation by implanted oxygen wafers. Ways of producing silicon-on-insulator wafers; Growth of the buried oxide during high-temperature oxidation; Modification of the classical Deal and Grove oxidation model.

  • Growth of buried silicon oxide in Si-Si bonded wafers upon annealing. Himcinschi, C.; Milekhin, A.; Friedrich, M.; Hiller, K.; Wiemer, M.; Gessner, T.; Schulze, S.; Zahn, D. R. T. // Journal of Applied Physics;2/1/2001, Vol. 89 Issue 3, p1992 

    Properties of the buried silicon oxide layer in Si-Si bonded wafers upon annealing were studied using Infrared (IR) spectroscopy and high resolution transmission electron microscopy (HRTEM). IR spectra of chemically etched Si-Si bonded wafers allow the thickness of the buried oxide layers to be...

  • Stress effect on the kinetics of silicon thermal oxidation. Yen, Jui-Yuan; Hwu, Jenn-Gwo // Journal of Applied Physics;3/1/2001, Vol. 89 Issue 5, p3027 

    Oxidation of silicon wafers under external mechanical stress was studied in this work. From the oxide thickness profile measured by an automatic-scanning ellipsometer, it was found that the oxidation kinetics of silicon were significantly affected by mechanical stress. There are two distinct...

  • Onset of slip in silicon containing oxide precipitates. Jurkschat, K.; Senkader, S.; Wilshaw, P. R.; Gambaro, D.; Falster, R. J. // Journal of Applied Physics;10/1/2001, Vol. 90 Issue 7, p3219 

    We report a study of the behavior of dislocations at oxide precipitates in (001) Czochralski silicon wafers for different oxide-precipitate sizes (100–600 nm), densities (10[sup 8]-10[sup 11] cm[sup -3]), and background oxygen concentrations (7.7×10[sup 17]-10.35×10[sup 17] cm[sup...

  • Leakage current and capacitance characteristics of Si/SiO[sub 2] /Si single-barrier varactor. Mamor, M.; Fu, Y.; Nur, O.; Willander, M.; Bengtsson, S. // Applied Physics A: Materials Science & Processing;2001, Vol. 72 Issue 5, p633 

    Abstract. We investigate, both experimentally and theoretically, current and capacitance (I-V/C-V) characteristics and the device performance of Si/SiO[sub 2]/Si single-barrier varactor diodes (SBVs). Two diodes were fabricated with different SiO[sub 2] layer thicknesses using the...

  • Evaluating different approaches to critical HF-last cleaning. Kashkoush, Ismail; Gim Chen; Novak, Richard // Solid State Technology;Jul2003, Vol. 46 Issue 7, p139 

    Examines the performance of oxide etching accuracy during the cleaning of semiconductor wafer. Dependence on bath temperature and tight control of high frequency concentration; Methods of chemical control; Significance of the chemical concentration control system.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics