Effect of HCl on silicon point defect formation during thermal oxidation of (100) float zone silicon wafers

Oh, Seajin; Tiller, W. A.; Hahn, SooKap
April 1986
Applied Physics Letters;4/28/1986, Vol. 48 Issue 17, p1125
Academic Journal
The effect of HCl in an oxidizing ambient on Si interstitial formation during oxidation has been studied. Using an antimony buried marker in (100) Si wafers, self-interstitial generation is directly observed via its influence on Sb diffusion. Adding HCl up to 6 vol % reduces the self-interstitial flux generated at the oxidation front, but it does not completely eliminate it.


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