TITLE

Voltage-dependent plasticity in HgCdTe

AUTHOR(S)
Pellegrino, Joseph; Galligan, J. M.
PUB. DATE
April 1986
SOURCE
Applied Physics Letters;4/28/1986, Vol. 48 Issue 17, p1127
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The effect of an applied, time-varying voltage on the plastic behavior of (Hg,Cd)Te has been investigated. We observe that both positive and negative voltages suppress plasticity, with the negative voltage being more effective. The influence of this voltage polarity is strain dependent and provides information on the charge of the mobile dislocations.
ACCESSION #
9819698

 

Related Articles

  • Charge Carrier Mobility in n-Cd[sub x]Hg[sub 1 � ][sub x]Te Crystals Subjected to Dynamic Ultrasonic Stressing. Vlasenko, A. I.; Olikh, Ya. M.; Savkina, R. K. // Semiconductors;Jun2000, Vol. 34 Issue 6, p644 

    The Hall mobility was studied in the n-Cd[sub x]Hg[sub 1-x]Te crystals subjected to dynamic ultrasonic stressing (W[sub US] = 10[sup 4] W/m�, f = 5-7 MHz). It was found that, in field of the ultrasonic deformation, an increase in the carrier mobility in the impurity conduction region (T <...

  • Defect Formation in Epitaxial Layers of Cadmium Mercury Telluride Solid Solutions Highly Doped with Indium. Mvnbaev, K.D.; Ivanov-Omskii, V.I. // Technical Physics Letters;Aug2003, Vol. 29 Issue 8, p655 

    We have studied the effect of strong (up to 5 × 10[sup 21] cm[sup –3]) indium doping on the behavior of components in cadmium mercury telluride solid solutions. At an indium concentration in a modified subsurface layer on the order of 10[sup 21] cm[sup –3], these layers are...

  • Boron ion implantation in p-type Hg0.8Cd0.2Te. Kumar, R.; Dutt, M. B.; Nath, R.; Chander, R.; Gupta, S. C. // Journal of Applied Physics;12/1/1990, Vol. 68 Issue 11, p5564 

    Presents a study that examined boron ion implantation in p-type mercury-cadmium-telluride. Description of the single crystals used; Analysis of the atomic/carrier concentration and mobility profiles versus depth for the as-implanted samples; Explanation for the behavior of the carrier...

  • Influence of stoichiometry on the electrical activity of impurities in Hg(1-x)Cd(x)Te. Capper, P.; Roberts, J. A.; Kenworthy, I.; Jones, C. L.; Gosney, J. J. G.; Ard, C. K.; Coates, W. G. // Journal of Applied Physics;12/1/1988, Vol. 64 Issue 11, p6227 

    Presents a study that examined the influence of stoichiometry on the electrical activity of impurities in mercury cadmium telluride crystal. Analysis of the electrical properties of the doped and undoped crystals; Examination of the behavior added impurities in the samples; Conclusions.

  • Dislocations in Hg1-xCdxTe/Cd1-zZnzTe epilayers grown by liquid-phase epitaxy. Yoshikawa, Mitsuo // Journal of Applied Physics;3/1/1988, Vol. 63 Issue 5, p1533 

    Presents a study which examined the dislocations in mercury cadmium telluride epitaxial layers grown on (111)B cadmium telluride and cadmium zinc telluride substrates by liquid-phase epitaxy. Background information on dislocations in mercury cadmiun telluride liquid-phase epitaxy layers;...

  • Electrophysical Properties of Hg[sub 1 — ][sub x]Cd[sub x]Te Crystals under Hydrostatic Pressure. Virt, I. V.; Prozorovskiı, V. D.; Tsyutsyura, D. I. // Semiconductors;Jan2000, Vol. 34 Issue 1, p32 

    The electrophysical properties of Hg[sub 1 - x]Cd[sub x]Te crystals subjected to hydrostatic pressure were studied by a noncontact method. It is shown that there exists the effect of irreversible change in the state of native lattice defects. A decrease in hole (acceptor) concentration and an...

  • Effect of laser irradiation on structural, electrical, and optical properties of p-mercury cadmium telluride. Dawar, A. L.; Roy, Savita; Mall, R. P.; Mathur, P. C. // Journal of Applied Physics;10/1/1991, Vol. 70 Issue 7, p3516 

    Presents a study which described the effect of laser irradiation on the structural, electrical and optical properties of p-mercury cadmium telluride (p-MCT) single crystals. Variation of Hall coefficient with temperature; Details on the x-ray diffraction pattern and transmission measurements of...

  • Surface properties of p-Hg1-xCdxTe. Höschl, P.; Moravec, P.; Franc, J.; Grill, R.; Belas, E. // Journal of Applied Physics;7/1/1991, Vol. 70 Issue 1, p313 

    Presents a study that examined the surface electrical properties of mercury cadmium telluride crystals. Measurement of the electrical conductivity of the crystals; Determination of the Hall coefficient of the crystals; Influence of crystal surface on the galvanomagnetic properties of the crystals.

  • Surface Structure of (111)A HgCdTe. Benson, J. D.; Varesi, J. B.; Stoltz, A. J.; Smith, E. P. G.; Johnson, S. M.; Jaime-Vasquez, M.; Markunas, J. K.; Almeida, L. A.; Molstad, J. C. // Journal of Electronic Materials;Jun2006, Vol. 35 Issue 6, p1434 

    The surface of (111)A HgCdTe has been studied by reflection high-energy electron diffraction and atomic force microscopy (AFM). The as-grown liquid-phase epitaxy (LPE) surface has bilayer (3.7 ± 0.2 Å) step/terrace structures, macro-steps, and cross-hatch patterns. Macro-steps occur about...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics