TITLE

Charge character of interface traps at the Si-SiO2 interface

AUTHOR(S)
Shiono, Noboru; Shimaya, Masakazu; Nakajima, Osaake
PUB. DATE
April 1986
SOURCE
Applied Physics Letters;4/28/1986, Vol. 48 Issue 17, p1129
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Interface traps in the upper half of a silicon band gap are acceptorlike. This is based on analyses of the shift in capacitance-voltage curves due to positive bias-temperature aging of metal-oxide-semiconductor capacitors fabricated on n- and p-type substrates. The experimental results show that the interface traps in the upper half are generated without an increase in fixed oxide charges or interface traps in the lower half. The results also show that the flatband voltage shifts positively for n-type capacitors, while it does not shift for p-type capacitors.
ACCESSION #
9819696

 

Related Articles

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics