TITLE

High-field-induced voltage-dependent oxide charge

AUTHOR(S)
Olivo, P.; Riccò, B.; Sangiorgi, E.
PUB. DATE
April 1986
SOURCE
Applied Physics Letters;4/28/1986, Vol. 48 Issue 17, p1135
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In this work, we investigate the effects of nondisruptive high-field stress on the tunneling characteristics of thin SiO2 films (<100 Ã…) and show that after the stress the charge trapped within the oxide reversibly depends on the applied voltage. This is explained with a model where electrons tunnel in and out of trap states located near the injecting interface. Consequently, the trap occupation, hence oxide charge, is determined by transmission coefficients that strongly depend on the actual oxide potential.
ACCESSION #
9819692

 

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