High-field-induced voltage-dependent oxide charge

Olivo, P.; Riccò, B.; Sangiorgi, E.
April 1986
Applied Physics Letters;4/28/1986, Vol. 48 Issue 17, p1135
Academic Journal
In this work, we investigate the effects of nondisruptive high-field stress on the tunneling characteristics of thin SiO2 films (<100 Ã…) and show that after the stress the charge trapped within the oxide reversibly depends on the applied voltage. This is explained with a model where electrons tunnel in and out of trap states located near the injecting interface. Consequently, the trap occupation, hence oxide charge, is determined by transmission coefficients that strongly depend on the actual oxide potential.


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