TITLE

Interdiffusion at the Ge(100)/Sn and Ge(111)/Sn interfaces

AUTHOR(S)
Gossmann, H.-J.; Feldman, L. C.
PUB. DATE
April 1986
SOURCE
Applied Physics Letters;4/28/1986, Vol. 48 Issue 17, p1141
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Interdiffusion between an ultrathin film of Sn and the Ge(100)c2×4 and Ge(111)c2×8 surfaces under atomically clean conditions is investigated using Rutherford backscattering. Indiffusion is found only if the Sn coverage exceeds a certain critical coverage θc≊1.15×1015 cm-2 even at temperatures up to 700 K. This result implies that the diffusion coefficient is at least six orders of magnitude smaller than the literature bulk value for θ<θc. We explain the observation in terms of surface segregation concepts. The temperature necessary to drive the Sn into the sample is strongly dependent on the sample surface orientation.
ACCESSION #
9819688

 

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