TITLE

Structural characterization of GaInAs(P)/InP quantum well structures grown by gas source molecular beam epitaxy

AUTHOR(S)
Vandenberg, J. M.; Hamm, R. A.; Macrander, A. T.; Panish, M. B.; Temkin, H.
PUB. DATE
April 1986
SOURCE
Applied Physics Letters;4/28/1986, Vol. 48 Issue 17, p1153
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have carried out an x-ray study of 20-well quaternary InGaAsP/InP and ternary InGaAs/InP structures grown on [100]InP by gas source molecular beam epitaxy (GSMBE). The multilayers were found to grow laterally coherent and very closely lattice matched in the [100] growth direction. The presence of well-defined higher order harmonics in the high-resolution x-ray diffraction confirms the excellent quality of InGaAs(P)/InP superlattices grown by the GSMBE technique.
ACCESSION #
9819679

 

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