TITLE

Nonlinear optical determination of the energy gap of Hg1-xCdxTe using two-photon absorption techniques

AUTHOR(S)
Seiler, D. G.; McClure, S. W.; Justice, R. J.; Loloee, M. R.; Nelson, D. A.
PUB. DATE
April 1986
SOURCE
Applied Physics Letters;4/28/1986, Vol. 48 Issue 17, p1159
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The energy band gap of Hg1-xCdxTe has been determined for the first time using two-photon absorption techniques with CO2 lasers for samples with x≊0.32.
ACCESSION #
9819671

 

Related Articles

  • Erratum: “Relation between Debye temperature and energy band gap of semiconductors” [AIP Adv. 7, 045109 (2017)]. Ullrich, Bruno; Bhowmick, Mithun; Haowen Xi // AIP Advances;2017, Vol. 7 Issue 10, p1 

    No abstract available.

  • Band parameters for nitrogen-containing semiconductors. Vurgaftman, I.; Meyer, J.R. // Journal of Applied Physics;9/15/2003, Vol. 94 Issue 6, p3675 

    Presents a comprehensive and up-to-date compilation of band parameters for all of the nitrogen-containing III-V semiconductors that have been investigated to date. Main classes; Tabulation of the direct and indirect energy gaps, spin-orbit and crystal-field splittings; Use of the band...

  • Effective band-gap shrinkage in GaAs. Harmon, E.S.; Melloch, M.R.; Lundstrom, M.S. // Applied Physics Letters;1/24/1994, Vol. 64 Issue 4, p502 

    Demonstrates the effective band-gap shrinkage from measurements on heavily doped gallium arsenide (GaAs). Convulsion on the collector current-voltage characteristic of a homojunction bipolar transistor; Band-gap shrinkage in heavily doped p-GaAs; Observation of an effective band-gap widening at...

  • Band-gap engineering in periodic elastic composites. Kushwaha, M.S.; Halevi, P. // Applied Physics Letters;2/28/1994, Vol. 64 Issue 9, p1085 

    Examines the band-gap engineering in periodic elastic composites. Size of the band gap in semiconductors; Dependence of the gap widths on the filling fraction; Existence of full gaps in the phononic crystals.

  • Electron-wave quarter-wavelength quantum well impedance transformers between differing energy-gap semiconductors. Gaylord, T. K.; Glytsis, E. N.; Brennan, K. F. // Journal of Applied Physics;3/1/1990, Vol. 67 Issue 5, p2623 

    Focuses on a study which designed impedance transformers for ballistic electron waves traveling between dissimilar energy-gap semiconductors as a series of quarter wavelength layers in the form of a compositional superlattice. Quantitative analogies between electromagnetic-wave propagation in...

  • Predicted band gap of the new semiconductor SiGeSn. Soref, Richard A.; Perry, Clive H. // Journal of Applied Physics;1/1/1991, Vol. 69 Issue 1, p539 

    Presents a study which calculated the direct and indirect band gaps of the new ternary semiconductor SiGeSn. Estimate of the optical indices of refraction of SiGeSn; Plot of energy gap as a function of lattice constant for the compound semiconductors; Effect of the coherent strain in germanium...

  • Manifestation of Coulomb Gap in Two-Dimensional p-GaAs–AlGaAs Structures with Filled Upper Hubbard Band. Agrinskaya, N. V.; Kozub, V. I.; Ustinov, V. M.; Chernyaev, A. V.; Shamshur, D. V. // JETP Letters;9/25/2002, Vol. 76 Issue 6, p360 

    The transport properties of multilayer GaAs/A1GaAs structures doped modulationally with Be so as to fill, in equilibrium, the states of upper Hubbard band (A[sup +] centers) with holes were studied. For the concentration of dopants on the order of 5 × 10[sup 11] cm[sup -2], the hopping...

  • Electrostatic model of the energy gap between Hubbard bands for boron atoms in silicon. Poklonskiı, N. A.; Syaglo, A. I. // Semiconductors;Apr99, Vol. 33 Issue 4, p391 

    Electrostatics is used to model the narrowing of the energy gap ε[sub 2] between Hubbard bands (the A[sup 0]- and A[sup +]-bands) in a p-doped semiconductor with increasing acceptor concentration N = N[sub 0] + N[sub 1] + N[sub +1] and with increasing degree of compensation K by donors for...

  • THE TRANSFORMING MMIC. Martinez, Edgar J. // International Journal of High Speed Electronics & Systems;Mar2003, Vol. 13 Issue 1, p59 

    In this paper, we describe two new DARPA initiatives addressing new concepts in compound semiconductor materials and architectures that will radically transform monolithic microwave integrated circuits (MMICs) technology to address future requirements for military and commercial sensors and...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics