Photo-assisted anisotropic etching of phosphorus-doped polycrystalline silicon employing reactive species generated by a microwave discharge

Hayasaka, N.; Okano, H.; Sekine, M.; Horiike, Y.
April 1986
Applied Physics Letters;4/28/1986, Vol. 48 Issue 17, p1165
Academic Journal
An anisotropic etching of heavily phosphorus-doped polycrystalline silicon is achieved by protecting the etched sidewall with polymerized film which results from the reaction of chlorine species and methyl methacrylate. Chlorine species are generated by a microwave discharge in Cl2 in the portion separated from a reaction chamber with a laser beam irradiation system. The laser beam enhances the removal of the polymerized film on the illuminated surface except the sidewall. And the Si/SiO2 etch rate ratio is infinite in this system.


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