TITLE

Photo-assisted anisotropic etching of phosphorus-doped polycrystalline silicon employing reactive species generated by a microwave discharge

AUTHOR(S)
Hayasaka, N.; Okano, H.; Sekine, M.; Horiike, Y.
PUB. DATE
April 1986
SOURCE
Applied Physics Letters;4/28/1986, Vol. 48 Issue 17, p1165
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
An anisotropic etching of heavily phosphorus-doped polycrystalline silicon is achieved by protecting the etched sidewall with polymerized film which results from the reaction of chlorine species and methyl methacrylate. Chlorine species are generated by a microwave discharge in Cl2 in the portion separated from a reaction chamber with a laser beam irradiation system. The laser beam enhances the removal of the polymerized film on the illuminated surface except the sidewall. And the Si/SiO2 etch rate ratio is infinite in this system.
ACCESSION #
9819668

 

Related Articles

  • Observation of capacitive modulation of bipolar current in crystalline silicon gated p-i-n structures. Sun, C. C.; Xu, J. M. // Applied Physics Letters;5/8/1989, Vol. 54 Issue 19, p1875 

    We report, for the first time, the experimental observation of capacitive modulation of bipolar current in crystalline silicon devices consisting of a lateral p-i-n channel and an insulated polycrystalline silicon gate. Modulation characteristics of devices with different channel lengths are...

  • Inductive-coupling-nitrogen-plasma process for suppression of boron penetration in.... Chao, T.S.; Chu, C.H. // Applied Physics Letters;1/6/1997, Vol. 70 Issue 1, p55 

    Demonstrates a method of suppressing boron penetration in boron fluoride-implanted polycrystalline silicon gate. Utilization of the inductive-coupling-nitrogen-plasma (ICNP) process in the method; Presence of a nitrogen layer in the silicon oxide and silicon interface; Demonstration of the...

  • Observation of a leaky wave guide resonance mode in polycrystalline silicon structures using infrared spectroscopic ellipsometry. Ferrieu, F. // Applied Physics Letters;10/19/1998, Vol. 73 Issue 16 

    Optical constants of polycrystalline silicon, used as the gate electrode material in semiconductor technology, have been analyzed by infrared spectroscopic ellipsometry. In the optical refractive indices n, k of the polycrystalline silicon material, we observed an unexpected absorption resonance...

  • Characterization of polycrystalline silicon contacts by photoconductance measurements. Jalali, Bahram; Yang, Edward S.; Mei, Ping // Journal of Applied Physics;2/15/1990, Vol. 67 Issue 4, p1953 

    Presents a study that examined the confinement of minority carriers by polycrystalline silicon contacts of a photoconductor using a photoconductivity technique. Background on the modeling of a photoconductor with polysilicon contacts; Comparison of the photoconductive decay time of polysilicon...

  • On the Physical Nature of a Photomechanical Effect. Gerasimov, A. B.; Chiradze, G. D.; Kutivadze, N. G. // Semiconductors;Jan2001, Vol. 35 Issue 1, p72 

    A photomechanical effect was studied in single-crystal Si by a unified method. The dependences of the photomechanical effect on the spectrum and intensity of light, the residual photomechanical effect (the persistence of crystal softening for some time after the termination of indention), the...

  • Model of sagittally bent silicon crystals diffracting in the Laue mode: Effects of elastic anisotropy on the rocking-curve widths (abstract). Zhong, Z.; Siddons, D. P.; Chapman, D.; Kao, C. C.; Zhong, N.; Hastings, J. B. // Review of Scientific Instruments;Mar2002, Vol. 73 Issue 3, p1615 

    Sagittal focusing of synchrotron x rays with asymmetric Laue crystals has been proposed and demonstrated [Z. Zhong, C. C. Kao, D. P. Siddons, and J. B. Hastings, J. Appl. Crystallogr., Pts I&II (submitted)]. At high x-ray energies, sagittal focusing by a Laue crystal is preferred because of the...

  • Differentiating between elastically bent rectangular beams and plates. Kaldor, S. K.; Noyan, I. C. // Applied Physics Letters;4/1/2002, Vol. 80 Issue 13, p2284 

    We report x-ray microdiffraction curvature measurements of a (100)-type Si single crystal loaded in four-point bending and provide experimental verification of a procedure for differentiating between anisotropic, elastically bent beams and plates. In general usage, beam and plate components are...

  • Influence of the grain structure on the Fermi level in polycrystalline silicon: A quantum size effect? Lifshitz, N.; Luryi, S.; Sheng, T. T. // Applied Physics Letters;11/30/1987, Vol. 51 Issue 22, p1824 

    It has been observed by several authors that metal-oxide-semiconductor devices with polycrystalline Si (poly-Si) gates behave differently depending on the doping species in poly-Si: the work-function difference between the silicon substrate and the gate ([lowercase_phi_synonym]PS) is higher when...

  • Selective deposition of diamond crystals by chemical vapor deposition using a tungsten-filament method. Hirabayashi, K.; Taniguchi, Y.; Takamatsu, O.; Ikeda, T.; Ikoma, K.; Iwasaki-Kurihara, N. // Applied Physics Letters;11/7/1988, Vol. 53 Issue 19, p1815 

    Selective deposition of polycrystalline and single-crystal diamonds has been achieved on a silicon wafer by chemical vapor deposition from CH4 and H2 gases using a hot-filament method. The nucleation of diamonds occurs selectively at the sites fabricated by successive roughening and patterned...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics