TITLE

Electron irradiation-activated low-temperature annealing of phosphorus-implanted silicon

AUTHOR(S)
Miyao, M.; Polman, A.; Sinke, W.; Saris, F. W.; van Kemp, R.
PUB. DATE
April 1986
SOURCE
Applied Physics Letters;4/28/1986, Vol. 48 Issue 17, p1132
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
High-energy (0.2–0.8 MeV, ≊1017 cm-2) electron irradiation-stimulated solid phase regrowth of phosphorus-implanted silicon layers has been observed in the temperature range 350–600 °C. The influence of electron irradiation on the annealing of an isolated damage layer and of a continuous amorphous layer is compared. An ionization effect is found to enhance annealing of trapping centers in the isolated damage region. In addition, a small enhancement of solid phase epitaxial regrowth of the continuous amorphous layer was found, attributed to an elastic displacement effect.
ACCESSION #
9819649

 

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