Electron irradiation-activated low-temperature annealing of phosphorus-implanted silicon

Miyao, M.; Polman, A.; Sinke, W.; Saris, F. W.; van Kemp, R.
April 1986
Applied Physics Letters;4/28/1986, Vol. 48 Issue 17, p1132
Academic Journal
High-energy (0.2–0.8 MeV, ≊1017 cm-2) electron irradiation-stimulated solid phase regrowth of phosphorus-implanted silicon layers has been observed in the temperature range 350–600 °C. The influence of electron irradiation on the annealing of an isolated damage layer and of a continuous amorphous layer is compared. An ionization effect is found to enhance annealing of trapping centers in the isolated damage region. In addition, a small enhancement of solid phase epitaxial regrowth of the continuous amorphous layer was found, attributed to an elastic displacement effect.


Related Articles

  • Nature of the nuclei for thermal donor formation in silicon (or another variant of accelerated oxygen diffusion). Neımash, V. B.; Puzenko, E. A.; Kabaldin, A. N.; Kraıchinskiı, A. N.; Kras’ko, N. N. // Semiconductors;Dec99, Vol. 33 Issue 12, p1279 

    The influence of preliminary heat treatment at 800 °C on the accumulation and annealing kinetics of thermal donors formed at 450 °C in silicon single crystals is investigated by performing four-point measurements of the electrical resistivity. The activation energies for the generation and...

  • Hydrogen-oxygen-vacancy complexes in Czochralski-grown silicon crystal. Hatakeyama, H.; Suezawa, M. // Journal of Applied Physics;11/15/1997, Vol. 82 Issue 10, p4945 

    Studies the process of generation and some properties of shallow donors generated by annealing a hydrogen-doped Czochralski-grown silicon crystal after electron irradiation. Generation and annihilation of three kinds of shallow donors D1-D3; Estimation of the energy barrier;...

  • Identification of intrinsic gettering centers in oxygen-free silicon crystals. Ueda, O.; Nauka, K.; Lagowski, J.; Gatos, H. C. // Journal of Applied Physics;7/15/1986, Vol. 60 Issue 2, p622 

    Presents information on a study which identified intrinsic gettering centers in oxygen-free silicon crystals after a high-low-medium-temperature annealing cycle using transmission electron microscopy and energy dispersive x-ray spectroscopy. Description of a three-step annealing cycle commonly...

  • New intrinsic gettering process in silicon based on interactions of silicon interstitials. Nauka, K.; Lagowski, J.; Gatos, H. C.; Ueda, O. // Journal of Applied Physics;7/15/1986, Vol. 60 Issue 2, p615 

    Presents information on a study which proposed experimental data on an intrinsic gettering process found in silicon crystals subjected to a three-step annealing sequence. Characteristics of the intrinsic gettering process; Methodology of the study; Results and discussion.

  • Laser annealing of silicon. Poate, John M.; Brown, Walter L. // Physics Today;Jun82, Vol. 35 Issue 6, p24 

    Focuses on the technology of laser annealing of silicon. Information on how to make integrated circuits; Effect of pulsed or continuous-wave laser radiation on ion-implantation damage in semiconductors; Features and applications of silicon crystal growth and solidification revealed through...

  • A Model for the Formation of Donor Centers in Silicon Layers Implanted with Erbium and Oxygen Ions. Aleksandrov, O. V.; Zakhar’in, A. O. // Semiconductors;Nov2002, Vol. 36 Issue 11, p1209 

    Formation of donor centers in the course of annealing of layers of single-crystal silicon FZ-Si (grown by the float-zone method) and Cz-Si (grown by the Czochralski method) implanted with Er[SUP+] and O[SUP+] ions was simulated. The diffusion-kinetics equations accounting for the formation of...

  • Dependence of the Annealing Kinetics of A Centers and Divacancies on Temperature, Particle Energy, and Irradiation Dose for n-Si Crystals. Pagava, T. A. // Semiconductors;Oct2002, Vol. 36 Issue 10, p1079 

    n-Si crystals grown by the float-zone method with a phosphorus concentration of ∼6 x 10[sup 13] cm[sup -3] and irradiated with 2-MeV electrons and 25-MeV protons were studied. It is shown that the kinetics of the isochronous annealing of the A centers and divacancies (the annealing...

  • Epitaxial Growth of SiO[sub 2] on Mo(112). Schroeder, T.; Adelt, M.; Richter, B.; Naschitzki, M.; Bäumer, M.; Freund, H.-J. // Surface Review & Letters;Feb2000, Vol. 7 Issue 1/2, p7 

    A new preparation is reported which, for the first time, results in a thin, crystalline SiO[sub 2] film on a Mo(112) single crystal. The procedure consists of repeated cycles of silicon deposition and subsequent oxidation, followed by a final annealing procedure. AES and XPS have been used to...

  • Distribution of SiO2 precipitates in large, oxygen rich Czochralski-grown silicon single crystals after annealing at 750 °C. Bouchard, R.; Schneider, J. R.; Gupta, S.; Messoloras, S.; Stewart, R. J.; Nagasawa, H.; Zulehner, W. // Journal of Applied Physics;1/15/1995, Vol. 77 Issue 2, p553 

    Presents a study which examined the distribution of silicon dioxide precipitates in large, oxygen rich Czochralski-grown silicon single crystals after annealing. Shape and size of the silicon dioxide precipitates as determined from small angle neutron scattering; Thickness dependence of the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics