TITLE

Pulsed electron beam annealing of phosphorus-implanted CuInS2

AUTHOR(S)
Lin, J. L.; Lue, J. T.; Yang, M. H.; Hwang, H. L.
PUB. DATE
April 1986
SOURCE
Applied Physics Letters;4/21/1986, Vol. 48 Issue 16, p1057
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Pulsed electron beam annealing of phosphorus-implanted CuInS2 has been found to be an efficient method in p-type doping of CuInS2. A sheet resistance as low as 10.1 Ω/[Laplacian_variant], a sheet carrier concentration as high as 2.6×1016 cm-2, and a hole mobility as high as 499 cm2/V s have been obtained. The irradiation energy density for the best doping condition was determined to be in the range ∼11–13 J/cm2. Using Van der Pauw/Hall technique in conjunction with a chemical etching technique, effective carrier concentration profiles have been determined with a maximum carrier concentration of 9×1019 cm-3. Excellent p-n CuInS2 homojunctions have been fabricated by electron beam pulse annealing with an ideality factor of 1.75.
ACCESSION #
9819629

 

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