Pulsed electron beam annealing of phosphorus-implanted CuInS2

Lin, J. L.; Lue, J. T.; Yang, M. H.; Hwang, H. L.
April 1986
Applied Physics Letters;4/21/1986, Vol. 48 Issue 16, p1057
Academic Journal
Pulsed electron beam annealing of phosphorus-implanted CuInS2 has been found to be an efficient method in p-type doping of CuInS2. A sheet resistance as low as 10.1 Ω/[Laplacian_variant], a sheet carrier concentration as high as 2.6×1016 cm-2, and a hole mobility as high as 499 cm2/V s have been obtained. The irradiation energy density for the best doping condition was determined to be in the range ∼11–13 J/cm2. Using Van der Pauw/Hall technique in conjunction with a chemical etching technique, effective carrier concentration profiles have been determined with a maximum carrier concentration of 9×1019 cm-3. Excellent p-n CuInS2 homojunctions have been fabricated by electron beam pulse annealing with an ideality factor of 1.75.


Related Articles

  • Ribbon and Spot Beam Process Performance of the Dual Mode iPulsar High Current Ion Implanter. Kopalidis, Peter M.; Wan, Zhimin; Collart, Erik // AIP Conference Proceedings;1/7/2011, Vol. 1321 Issue 1, p337 

    Low energy implant process data are presented from a dual mode high current ion implanter. The iPulsar is a flexible single wafer implanter capable of running both ribbon beams with one-dimensional mechanical scan of the wafer and spot beams with two-dimensional wafer scan. The main components...

  • Effect of Fe and Zr ion implantation and high-current electron irradiation treatment on chemical and mechanical properties of Ti-V-Al Alloy. Pogrebnjak, Alexander D.; Kobzev, Alexander P. // Journal of Applied Physics;3/1/2000, Vol. 87 Issue 5, p2142 

    Provides information on a study which investigated the modification of structure and properties of metals surface as a result of combined high-dose ion implantation and high-current electron beam. Experimental methods; Results and discussion.

  • Model of the pair phosphorus atom–interstitial silicon atom. Chelyadinskiı, A. R.; Burenkov, V. A. // Physics of the Solid State;Nov98, Vol. 40 Issue 11, p1806 

    Interstitial defects in silicon implanted with P and Si ions are investigated by x-ray diffraction. It is established that the interstitial complexes formed by implantation and in subsequent heat treatment do not contain a P atom. A model is proposed for the pair PI: P atom-institial Si atom....

  • Diffusion of ion-implanted phosphorus within thermally grown SiO2 in O2 ambient. Yamaji, Tetsuo; Ichikawa, Fumio // Journal of Applied Physics;3/15/1986, Vol. 59 Issue 6, p1981 

    Presents a study which analyzed the behavior of ion-implanted phosphorus in silicon dioxide by secondary ion-mass spectrometry. Experiment; Results and discussion; Conclusion.

  • Transient phosphorous diffusion from silicon and argon implantation damage. Giles, Martin D. // Applied Physics Letters;4/19/1993, Vol. 62 Issue 16, p1940 

    Investigates the transient phosphorus (P) diffusion in silicon following implantation with silicon or argon ions at low doses. Observation of P diffusion due to the defect ingredients; Differences in the initial defect distributions; Importance of bulk recombination in determining defect...

  • Electrical activation of phosphorus-donors introduced in 6H-SiC by hot-implantation. Ohshima, T.; Abe, K.; Itoh, H.; Yoshikawa, M.; Kojima, K.; Nashiyama, I.; Okada, S. // Applied Physics A: Materials Science & Processing;2000, Vol. 71 Issue 2, p141 

    Abstract. Phosphorus ion (P[sup +]) implantations into 6H-SiC at room temperature (RT), 800 Celsius, and 1200 Celsius with mean concentrations of 1 x 10[sup 18]-5 x 10[sup 19]/cm[sup 3] were performed to investigate the effects of hot-implantation on the electrical activation of P atoms....

  • High carrier concentration in InP by Si+ and P+ dual implantations. Shen, Honglie; Yang, Genqing; Zhou, Zuyao; Zou, Shichang // Applied Physics Letters;1/29/90, Vol. 56 Issue 5, p463 

    Dual implantations of 150 keV Si+ ions and 160 keV P+ ions with the same dose of 1×1015/ cm2 were performed at 200 °C. Si3 N4 encapsulated samples were annealed in a conventional furnace or a halogen tungsten lamp rapid thermal annealing system. The carrier concentration profiles show...

  • First order gain and index coupled distributed feedback lasers in ZnSe-based structures with.... Eisert, D.; Bacher, G. // Applied Physics Letters;1/29/1996, Vol. 68 Issue 5, p599 

    Evaluates the first order gain and index coupled distributed feedback lasers based on zinc selenide structures. Utilization of focused ion beam implantation and electron beam lithography; Implication of emission wavelength on grating period; Details on the fine tuning of emission wavelength in...

  • Illumination-induced recovery of Cu(In,Ga)Se[sub 2] solar cells after high-energy electron irradiation. Jasenek, A.; Rau, U.; Weinert, K.; Schock, H. W.; Werner, J. H. // Applied Physics Letters;3/3/2003, Vol. 82 Issue 9, p1410 

    Cu(In, Ga)Se[sub 2]/CdS/ZnO solar cells irradiated with a 1 MeV electron fluence of 10[sup 18] cm[sup -2] degrade to about 80% of their initial conversion efficiency. Illumination with white light at an intensity of 100 mW cm[sup -2] for 3 h at room temperature restores more than 90% of the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics