TITLE

Pulse diffusion of Ge into GaAs

AUTHOR(S)
Lester, S. D.; Farley, C. W.; Kim, T. S.; Streetman, B. G.; Anthony, J. M.
PUB. DATE
April 1986
SOURCE
Applied Physics Letters;4/21/1986, Vol. 48 Issue 16, p1063
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The diffusion of Ge into GaAs from a thin elemental source using rapid thermal processing has been investigated. Several types of encapsulants and substrates have been examined. The diffusion and activation of Ge have been found to depend on both the encapsulant and substrate growth conditions. Photoluminescence spectroscopy indicates that Ga vacancies may control dopant diffusion and activation. Very shallow n+ junctions and nonalloyed ohmic contacts to semi-insulating GaAs have been formed.
ACCESSION #
9819624

 

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