Pulse diffusion of Ge into GaAs

Lester, S. D.; Farley, C. W.; Kim, T. S.; Streetman, B. G.; Anthony, J. M.
April 1986
Applied Physics Letters;4/21/1986, Vol. 48 Issue 16, p1063
Academic Journal
The diffusion of Ge into GaAs from a thin elemental source using rapid thermal processing has been investigated. Several types of encapsulants and substrates have been examined. The diffusion and activation of Ge have been found to depend on both the encapsulant and substrate growth conditions. Photoluminescence spectroscopy indicates that Ga vacancies may control dopant diffusion and activation. Very shallow n+ junctions and nonalloyed ohmic contacts to semi-insulating GaAs have been formed.


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