Kinetics of arsenic activation and clustering in high dose implanted silicon

Kamgar, Avid; Baiocchi, F. A.; Sheng, T. T.
April 1986
Applied Physics Letters;4/21/1986, Vol. 48 Issue 16, p1090
Academic Journal
We have observed a metastable state in activation of high dose arsenic implants into silicon. This state is marked by a local minimum in the sheet resistance which increases to a local maximum as the anneal time increases. Detailed sheet resistance data as well as Rutherford backscattering and transmission electron microscopy indicate that the initial minimum in sheet resistance is due to activation of arsenic atoms by occupying substitutional sites as the amorphous silicon recrystallizes. The subsequent clustering of arsenic atoms is the cause for the increase in the sheet resistance while the final drop is associated with the lateral diffusion of arsenic. We have studied this effect in the 850–1100 °C temperature range, and have obtained an activation energy of 1.1 eV for the clustering of arsenic atoms.


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