TITLE

High-speed GaAs/AlGaAs photoconductive detector using a p-modulation-doped multiquantum well structure

AUTHOR(S)
Kaede, K.; Arakawa, Y.; Derry, P.; Paslaski, J.; Yariv, A.
PUB. DATE
April 1986
SOURCE
Applied Physics Letters;4/21/1986, Vol. 48 Issue 16, p1096
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A new type of high-speed GaAs/AlGaAs photoconductive detector utilizing the high drift velocity of minority electrons in a p-modulation doped multiquantum well structure is demonstrated. In this modulation-doped structure, the electron scattering is reduced, which leads to the enhancement of the electron (minority carrier) drift velocity which determines the response speed of the detector. A deconvolved pulse response as narrow as 33 ps full width at half-maximum was obtained with an electric field of 3.1 kV/cm at room temperature.
ACCESSION #
9819605

 

Related Articles

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics