TITLE

Patterned aluminum growth via excimer laser activated metalorganic chemical vapor deposition

AUTHOR(S)
Higashi, G. S.; Fleming, C. G.
PUB. DATE
April 1986
SOURCE
Applied Physics Letters;4/21/1986, Vol. 48 Issue 16, p1051
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Excimer laser photolysis of organoaluminum adlayers has been used to catalytically activate the deposition of Al via thermal decomposition of triisobutylaluminum. The process exhibits good spatial selectivity and patterns with 4 μm resolution have been accurately reproduced. Patterned Al metallizations have been performed on Si, SiO2, Al2O3, and GaAs substrates and show promise for practical applications. Electrical measurements probing Al/substrate interface quality indicate that this technique may be suitable for the fabrication of rectifying contacts on GaAs.
ACCESSION #
9819587

 

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