dc and microwave characteristics of a high current double interface GaAs/InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistor

Henderson, T.; Klem, J.; Peng, C. K.; Gedymin, J. S.; Kopp, W.; Morkoç, H.
April 1986
Applied Physics Letters;4/21/1986, Vol. 48 Issue 16, p1080
Academic Journal
Extremely large current double interface GaAs/In0.15 Ga0.85 As/Al0.15 Ga0.85 As pseudomorphic modulation-doped field-effect transistors (MODFET’s) grown by molecular beam epitaxy were achieved. The 1-μm gate devices studied have peak current levels (430 mA/mm at 300 K and 483 mA/mm at 77 K) roughly one and a half to two times that found in single interface pseudomorphic MODFET’s. These devices also retain high transconductances over a broad range of gate voltage, peaking at 312 mS/mm at 300 K and 362 mS/mm at 77 K. Further, excellent microwave performance is also obtained with a maximum frequency of oscillation ( fmax) of 37 GHz and a current gain cut-off frequency of as high as 23 GHz at 300 K. An output power level of 14 dBm (1 dB gain compression) was obtained at 6 GHz for a 290-μm gate width. This double interface single quantum well MODFET may be of great importance in millimeter wave power amplifiers.


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