TITLE

Effect of the silicon doping concentration on the recombination kinetics of DX centers in Al0.35Ga0.65As

AUTHOR(S)
Caswell, N. S.; Mooney, P. M.; Wright, S. L.; Solomon, P. M.
PUB. DATE
April 1986
SOURCE
Applied Physics Letters;4/21/1986, Vol. 48 Issue 16, p1093
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The recombination (electron capture) kinetics of the ionized DX center in AlxGa1-xAs have been measured as a function of temperature and silicon doping concentration. It is shown that for x[bar_over_tilde:_approx._equal_to]0.35, the silicon concentration dependence of the recombination kinetics is dominated by effects of the electron distribution in the conduction band, and is insensitive to changes in the trap characteristics. In a model kinetic calculation consistent with the data the trap is found to capture through a level 0.202 eV from the bottom of the conduction band with a width of 0.045 eV, independent of DX center concentration.
ACCESSION #
9819579

 

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